KRC112S - Даташиты. Аналоги. Основные параметры

SEMICONDUCTOR KRC110 KRC114 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT

SEMICONDUCTOR KRC116 KRC122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H

SEMICONDUCTOR KRC110M KRC114M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.

SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E With Built-in Bias Resistors. L B L DIM MILLIMETERS Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G

SEMICONDUCTOR KRC116M KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES With Built-in Bias Resistors. DIM MILLIMETERS O Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0

SEMICONDUCTOR KRC116S KRC122S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 With Built-in Bias Resistors. B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.2

SEMICONDUCTOR KRC110S KRC114S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-

SMD Type Transistors NPN Transistors KRC110S KRC114S SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features With Built in Bias Resistors Simplify Circuit Design 1 2 Reduce a Quantity of Parts and Manufaturing Process +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 Digital Transistors 1.Base C 2.Emitter 3.collector R1 B E Absolute Maximum Ratin

SMD Type Transistors NPN Transistors KRC116S KRC122S SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features With Built in Bias Resistors Simplify Circuit Design 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Reduce a Quantity of Parts and Manufaturing Process +0.1 1.9-0.1 Digital Transistors 1.IN 2.Common 3.OUT OUT R1 IN R2 COMMON Absolute Maximum Rat