Биполярный транзистор KRC404E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRC404E
Маркировка: ND
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: ESM
KRC404E Datasheet (PDF)
krc407v-krc409v.pdf
SEMICONDUCTOR KRC407V~KRC409VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 +
krc401e-krc406e.pdf
SEMICONDUCTOR KRC401E~KRC406ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_
krc407e-krc409e.pdf
SEMICONDUCTOR KRC407E~KRC409ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BDIM MILLIMETERSWith Built-in Bias Resistors_+A 1.60 0.10DSimplify Circuit Design _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process31D 0.27+0.10/-0.05_H
krc401-krc406.pdf
SEMICONDUCTOR KRC401~KRC406TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EM B MFEATURES DIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_+B 1.25 0.15Simplify Circuit Design._+C 0.90 0.1031Reduce a Quantity of Parts and Manufacturing Process.D 0.3+0.10/-0.05
krc407-krc409.pdf
SEMICONDUCTOR KRC407~KRC409TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES M B MDIM MILLIMETERSWith Built-in Bias Resistors_+A 2.00 0.20D2_Simplify Circuit Design B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process 1D 0.3+0.10/-0.05_+
krc401v-krc406v.pdf
SEMICONDUCTOR KRC401V~KRC406VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURES BWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3 + 0.05
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050