Биполярный транзистор KRC652U - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRC652U
Маркировка: NB
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: USV
KRC652U Datasheet (PDF)
krc657u-krc659u.pdf
SEMICONDUCTOR KRC657U~KRC659UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.1 5DIM MILLIMETERS_A 2.00 + 0.20Simplify Circuit Design.2 _A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D_B1 1.25 + 0.1C 0.65D 0.
krc657e-krc659e.pdf
SEMICONDUCTOR KRC657E~KRC659ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.1 5 DIM MILLIMETERSSimplify Circuit Design._A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process. _+A1 1.0 0.052_+B 1.6 0.05High Packing Density._
krc651u-krc656u.pdf
SEMICONDUCTOR KRC651U~KRC656UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Pa
krc651f-krc654f.pdf
SEMICONDUCTOR KRC651F~KRC654FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.DIM MILLIMETERSHigh Packing Density._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super mi
krc651e-krc656e.pdf
SEMICONDUCTOR KRC651E~KRC656ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._
krc657f-krc659f.pdf
SEMICONDUCTOR KRC657F~KRC659FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.DIM MILLIMETERSThin Fine Pitch Super mini 5pin Package._+A 1.0 0.05_+A1 0.7 0.05_+B
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