Биполярный транзистор KRC856E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRC856E
Маркировка: NF
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TES6
KRC856E Datasheet (PDF)
krc851e-krc856e.pdf
SEMICONDUCTOR KRC851E~KRC856ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packin
krc851u-krc856u.pdf
SEMICONDUCTOR KRC851U~KRC856UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High Packing
krc851f-krc854f.pdf
SEMICONDUCTOR KRC851F~KRC854FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.
krc857e-krc859e.pdf
SEMICONDUCTOR KRC857E~KRC859ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1FEATURESWith Built-in Bias Resistors.1 6 DIM MILLIMETERS_A 1.6 + 0.05Simplify Circuit Design._A1 1.0 + 0.052 5_B 1.6 + 0.05Reduce a Quantity of Parts and Manufacturing Process._B1 1.2 + 0.05High Packing Den
krc857u-krc859u.pdf
SEMICONDUCTOR KRC857U~KRC859UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.DIM MILLIMETERS1 6_A 2.00 + 0.20Simplify Circuit Design._2 5 A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D _B1 1.25 + 0.1Hig
krc857f-krc859f.pdf
SEMICONDUCTOR KRC857F~KRC859FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05Thin Fine Pitch Super
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS