Биполярный транзистор KRX208E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRX208E
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200(250) MHz
Статический коэффициент передачи тока (hfe): 80(30)
Корпус транзистора: TES6
KRX208E Datasheet (PDF)
krx208e.pdf
KRX208ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx208u.pdf
KRX208USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit de
krx207u.pdf
KRX207USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit de
krx203u.pdf
KRX203USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
krx205u.pdf
KRX205USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit des
krx206u.pdf
KRX206USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit des
krx205e.pdf
KRX205ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit desi
krx201e.pdf
KRX201ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx202e.pdf
KRX202ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx209e.pdf
KRX209ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx202u.pdf
KRX202USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
krx203e.pdf
KRX203ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx201u.pdf
KRX201USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
krx207e.pdf
KRX207ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx204e.pdf
KRX204ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx204u.pdf
KRX204USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
krx206e.pdf
KRX206ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 Pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
krx209u.pdf
KRX209USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS