Биполярный транзистор 2SC5523 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5523
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TOP-3D
2SC5523 Datasheet (PDF)
2sc5521 2sc5523 2sc5591a.pdf
Horizontal Deflection Transistor Series for TV OverviewBased on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performanceand compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe-operation, despite an absolutely minimal chip area which allows very compact package configuration. T
2sc5526.pdf
2SC5526TransistorsHigh-speed Switching Transistor(60V, 12A)2SC5526 External dimensions (Units: mm) Features1) Low saturation voltage.(Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A)10.0 4.52) High switching speed. 2.83.2 (Typ. tf = 0.1s at Ic = 6A)3) Wide SOA. (safe operating area)1.21.34) Complements the 2SA2007.0.80.752.54 2.54 2.6(1) (2) (3)( )
2sc5588.pdf
2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit: mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTER
2sc5570.pdf
2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) fMAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITC
2sc5589.pdf
2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCo
2sc5587.pdf
2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5548.pdf
2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 370 V CEO High DC current gain: h = 60 (min) (I = 0.2 A) FE CMaximum Ra
2sc5548a.pdf
2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 40 (min) (I = 0.2 A) FE CMaximum
2sc5590.pdf
2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit: mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACT
2sc5538.pdf
Ordering number:ENN6291NPN Epitaxial Planar Silicon Transistor2SC5538VHF to UHF OSC,High-Frequency Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =10.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=5.2GHz typ.2159 Ultrasmall, slim flat-lead package.[2SC5538](1.4mm 0.8mm 0.6mm)1.40.10.2531 20.450.21 : Base2
2sa2016 2sc5569.pdf
Ordering number : ENN6309B2SA2016 / 2SC5569PNP / NPN Epitaxial Planar Silicon Transistors2SA2016 / 2SC5569DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sc5565.pdf
Ordering number:ENN6306PNP/NPN Epitaxial Planar Silicon Transistors2SA2012/2SC5565DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2012/2SC5565]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-
2sc5536a.pdf
Ordering number : ENA1092 2SC5536ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF Low-Noise Amplifier,2SC5536AOSC ApplicationsFeatures Low-noise : NF=1.8dB typ (f=150MHz). High gain : S21e2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen free compliance.SpecificationsAbsolute Maximum Ra
2sc5539.pdf
Ordering number:ENN6341NPN Epitaxial Planar Silicon Transistor2SC5539VHF to UHFLow-Noise Wide-Band Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2159 High cutoff frequency : fT=7.5GHz typ.[2SC5539] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.
2sc5501a.pdf
Ordering number : ENA1061 2SC5501ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5501AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Large allowable collector dissipation : PC=500mW max.SpecificationsAbso
2sc5541.pdf
Ordering number:ENN6337NPN Epitaxial Planar Silicon Transistor2SC5541UHF to S BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=2GHz).unit:mm2 High gain : S21e =10dB typ (f=2GHz).2159 High cutoff frequency : fT=13GHz typ.[2SC5541] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.10.25
2sc5577.pdf
Ordering number:ENN6281NPN Triple Diffused Planar Silicon Transistor2SC5577Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5577] Adoption of MBIT process.20.0 3.35.02.03.40.
2sc5537.pdf
Ordering number:ENN6340NPN Epitaxial Planar Silicon Transistor2SC5537Low-Voltage, Low-CurrentHigh-frequency Amplifier ApplicationsFeatures Package Dimensions Low voltage, low current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2159: NF=2.6dB typ (f=1GHz).[2SC5537] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)
2sc5506.pdf
Ordering number:EN6070NPN Triple Diffused Planar Silicon Transistor2SC5506Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5506] Adoption of MBIT process.20.03.35.02.03.40.61.21 : Base
2sc5551.pdf
Ordering number:ENN6328NPN Epitaxial Planar Silicon Transistor2SC5551High-Frequency Medium-OutputAmplifier ApplicationsFeatures Package Dimensions High fT : (fT=3.5GHz typ).unit:mm Large current : (IC=300mA).2038A Large allowable collector dissipation (1.3W max).[2SC5551]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSA
2sc5540.pdf
Ordering number:ENN6280NPN Epitaxial Planar Silicon Transistor2SC5540UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions High cutoff frequency : fT=10GHz typ.unit:mm2 High gain : S21e =13dB typ (f=1GHz).2159 Low noise : NF=1.3dB typ (f=1GHz).[2SC5540] Small Cob : Cob=0.4pF typ. Ultrasmall, slim flat-lead package.1.
2sc5504.pdf
Ordering number:ENN6223NPN Epitaxial Planar Silicon Transistor2SC5504UHF to S Band Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21612 High gain : S21e =11dB typ (f=1GHz).[2SC5504] High cutoff frequency : fT=11GHz typ. Low voltage, low current operation.0.65 0.65(VC
2sc5503.pdf
Ordering number:ENN6222NPN Epitaxial Planar Silicon Transistor2SC5503VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =15dB typ (f=1GHz).2161 High cutoff frequency : fT=9.0GHz typ.[2SC5503]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter
2sa2016 2sc5569.pdf
Ordering number:ENN6309APNP/NPN Epitaxial Planar Silicon Transistors2SA2016/2SC5569DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2016/2SC5569]4.5 Adoption of FBET and MBIT processes.1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High
2sa2011 2sc5564.pdf
Ordering number:ENN6305PNP/NPN Epitaxial Planar Silicon Transistors2SA2011/2SC5564DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2011/2SC5564]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
2sc5578.pdf
Ordering number:ENN6297NPN Triple Diffused Planar Silicon Transistor2SC5578Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5578] Adoption of MBIT process.20.0 3.35.02.03.40.61.21 : Base
2sc5536.pdf
Ordering number:ENN6290NPN Epitaxial Planar Silicon Transistor2SC5536VHF Low-Noise Amplifier , OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.8dB typ (f=150MHz).unit:mm2 High gain : S21e =16dB typ (f=150MHz).2159 Ultrasmall, slim flat-lead package.[2SC5536](1.4mm 0.8mm 0.6mm)1.40.10.2531 20.450.21 : Base2 : Emitter3 :
2sa2013 2sc5566.pdf
Ordering number:ENN6307APNP/NPN Epitaxial Planar Silicon Transistors2SA2013/2SC5566DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2013/2SC5566]4.5 Adoption of FBET and MBIT processes.1.51.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi
2sc5551a.pdf
Ordering number : ENA1118 2SC5551ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Medium-Output2SC5551AAmplifier ApplicationsFeatures High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un
2sc5501.pdf
Ordering number:ENN6221NPN Epitaxial Planar Silicon Transistor2SC5501VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2161 High cutoff frequency : fT=7GHz typ.[2SC5501] Large allowable collector dissipation :PC=500mW max.0.65 0.650.15
2sa2014 2sc5567.pdf
Ordering number:ENN6321PNP/NPN Epitaxial Planar Silicon Transistors2SA2014/2SC5567DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2014/2SC5567]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sc5534.pdf
Ordering number:ENN6258NPN Epitaxial Planar Silicon Transistor2SC5534UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=2GHz).unit:mm2 High gain : S21e =10dB typ (f=2GHz).2161 High cutoff frequency : fT=13GHz typ.[2SC5534]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter2 :
2sc5502.pdf
Ordering number:ENN6279NPN Epitaxial Planar Silicon Transistor2SC5502High-Frequency Low-NoiseAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.1dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2161 High cutoff frequency : fT=8GHz typ.[2SC5502]0.65 0.650.150.34 30 to 0.11 20.60.65 0.52.01 : Emitter2 : Coll
2sa2013 2sc5566.pdf
Ordering number : ENN6307B2SA2013 / 2SC5566PNP / NPN Epitaxial Planar Silicon Transistors2SA2013 / 2SC5566DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sa2015 2sc5568.pdf
Ordering number:ENN6308PNP/NPN Epitaxial Planar Silicon Transistors2SA2015/2SC5568DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2015/2SC5568]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sc5593.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5508.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2
2sc5599.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5599NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5599 50 pcs (Non reel) 8 mm wide embossed
2sc5507.pdf
PRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5507NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
ne661m04 2sc5507.pdf
PRELIMINARY DATA SHEETNPN SILICON HIGHNE661M04FREQUENCY TRANSISTORFEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE:SOT-343 footprint, with a height of just 0.59 mm.Flat Lead Style for better RF performance.DESCRI
2sc5509.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5509NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA
2sc5574.pdf
2SC5574TransistorsPower Transistor (80V, 4A)2SC5574 Features External dimensions (Units : mm)1) Low saturation voltage.(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A)10.0 4.52) Excellent DC current gain characteristics.3.2 2.8 3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).1.21.35) Complements the 2SA2017.0.80.752.54 2.54 2.6(1) (2) (3)( )(1) (
2sc5576.pdf
2SC5576TransisitorsMedium Power Transistor(Motor or Relay drive) (6010V, 4A)2SC5576 Features Circuit diagram1) Built-in zener diode between collector and base.C2) Strong protection against reverse power surges due to "L" loads.B3) Built-in resistor between base and emitter.4) Built-in damper diode.R1 R2EB : BaseR1 4.5kC : Collector R2 300E : Emitter
2sc5511.pdf
2SC5511TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(160V, 1.5A)2SC5511 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = 160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SA2005.1.21.3
2sc5532.pdf
2SC5532TransistorsHigh-voltage Switching Transistor(400V, 5A)2SC5532 Features1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A)2) High switching speed. (tf : Max. 1s at Ic =4A)3) Wide SOA (safe operating area). Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 400 VCollector-emitter voltage VCEO 400 VEmitter-base voltage VEBO 7
2sc5575.pdf
2SC5575TransistorsHigh-voltage Switching Transisitor(Power Supply) (120V, 7A)2SC5575 Features External dimensions (Units : mm)1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A)2) Fast switching. (tf : Typ. 0.18s at IC = 5A)3) Wide SOA. (safe operating area)10.0 4.53.2 2.8 Absolute maximum ratings (Ta = 25C)1.21.3Parameter Symbol Limits Unit0.8Collecto
2sc5663 2sc5585.pdf
2SC5663 / 2SC5585 DatasheetLow frequency transistor (12V, 500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO12VIC500mA 2SC5663 2SC5585(VMT3) (EMT3)lFeatures l 1)High current2)Low VCE(sat).VCE(sat)250mV at IC=200mA/IB=10mAlApplicationlLOW FREQUENCY
2sc5585 2sc5663.pdf
2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit : mm) Applications For switching 2SC5585For muting (1)(2)(3)0.8 Features 1.61) High current. 2) Low VCE(sat). 0.1Min.(1) Emitter
2sc5531.pdf
2SC5531TransistorsHigh-Voltage Switching Transistor(400V, 2A)2SC5531 Features External dimensions (Units : mm)1) Low VCE(sat). VCE(sat)=0.15V (Typ.)13.1 (IC / IB =1A / 0.2A)3.22) High breakdown voltage.VCEO=400V3) Fast switching.8.8 tf 1.0s( ) 1 Base( ) 2 Collector (IC=0.8A)( ) 3 Emitter0.5Min.ROHM : PSD3EIAJ : SC-83A StructureThree-lay
2sa2016 2sc5569.pdf
Ordering number : EN6309D2SA2016/2SC5569Bipolar Transistorhttp://onsemi.com(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sc5536a.pdf
Ordering number : ENA1092A2SC5536ARF Transistorhttp://onsemi.com12V, 50mA, fT=1.7GHz, NPN Single SSFPFeatures Low-noise : NF=1.8dB typ (f=150MHz) High gain S21e =16dB typ (f=150MHz) : 2 Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings
2sc5501a-4-tr-e.pdf
Ordering number : ENA1061A2SC5501ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCP4Features Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =13dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Large allowable collector dissipation : PC=500mW maxSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ra
2sc5551ae 2sc5551af.pdf
Ordering number : ENA1118A2SC5551ARF Transistorhttp://onsemi.com30V, 300mA, fT=3.5GHz, NPN Single PCPFeatures High fT : (fT=3.5GHz typ) Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 40 VCollector-to-Emitter Volta
2sa2013 2sc5566.pdf
Ordering number : EN6307C2SA2013/2SC5566Bipolar Transistorhttp://onsemi.com(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sc5383 2sc5583.pdf
Power Transistors2SC5583Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra
2sc5553.pdf
Power Transistors2SC5553Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum
2sc5514.pdf
Power Transistors2SC5514Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.
2sc5515.pdf
Power Transistors2SC5515Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.
2sc5556.pdf
Transistors2SC5556Silicon NPN epitaxial planar typeFor UHF band low-noise amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazinepacking (0.95) (0.95)1.90.12.90+0.20
2sc5580.pdf
Transistors2SC5580Silicon NPN epitaxial planer typeUnit: mmFor high-frequency oscillation / switching0.3+0.1 0.15+0.100.050.03 Features High transition frequency fT S-mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.65) (0.65)packing.1.30.12.00.210 Absolute Maximu
2sc5519.pdf
Power Transistors2SC55192SC55192SC55192SC55192SC5519Silicon NPN triple diffusion mesa typeUnit: mm15.50.5 3.00.3For horizontal deflection output 3.20.155 Features High breakdown voltage, and high reliability through the use of a5glass passivation layer5 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.
2sc5591.pdf
Power Transistors2SC5591Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage: 1 700 V; supporting a large screen CRTand wider visible angle5 High-speed switching: tf
2sc5505.pdf
Power Transistors2SC5505Silicon NPN epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High-speed switching TO-220D built-in: Excellent package with withstand voltage 5 kVguaranteed1.40.22.60.11.60.2 Absolute Maximum Ratings TC = 25C0.80.1 0.550.15Parameter Symbol Rating UnitCollector-bas
2sc5552.pdf
Power Transistors2SC5552Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum
2sc5513.pdf
Power Transistors2SC5513Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.
2sc5516.pdf
Power Transistors2SC5516Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.
2sc5518.pdf
Power Transistors2SC5518Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.
2sc5546.pdf
Power Transistors2SC5546Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer55 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.10.10.70.1 Absolute Maximum
2sc5592.pdf
Transistors2SC5592Silicon NPN epitaxial planer typeUnit: mmFor DC-DC converter0.40+0.100.050.16+0.100.06For various driver circuits3 Features1 2 Low collector to emitter saturation voltage VCE(sat) , large current(0.95) (0.95)capacitance1.90.1 High-speed switching2.90+0.200.05 Mini type 3-pin package, allowing downsizing and thinning o
2sc5584.pdf
Power Transistors2SC5584Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra
2sc5597.pdf
Power Transistors2SC5597Silicon NPN triple diffusion mesa typeUnit: mmFor horizontal deflection output20.00.5 5.00.3(3.0) 3.30.2 Features High breakdown voltage, and high reliability through the use of aglass passivation layer(1.5) High-speed switching Wide area of safe operation (ASO) (1.5)2.00.32.70.33.00.31.00.2 Absolute Maximum Ra
2sc5517.pdf
Power Transistors2SC5517Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.
2sc5569.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. 1SOT-89*High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes ORDERING INFORMATION Ord
2sc5545.pdf
2SC5545Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-746 (Z)1st. EditionJan. 1999Features Excellent inter modulation characteristic High power gain and low noise figure ;PG=16dB typ. , NF=1.1dB typ. at f=900MHzOutlineMPAK-42314 1. Collector2. Emitter3. Base4. EmitterNote: Marking is ZS-.2SC5545Absolute Maximum Ratings (Ta = 25
2sc5554.pdf
2SC5554Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-692 (Z)1st. EditionOct. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is YH-.2SC5554Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base
2sc5555.pdf
2SC5555Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-693 (Z)1st. EditionNov. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is ZD-.2SC5555Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to bas
2sc5594.pdf
2SC5594Silicon NPN EpitaxialHigh Frequency Low Noise AmplifierADE-208-798 (Z)1st. EditionNov. 2000Features High gain bandwidth productfT = 24 GHz typ. High power gain and low noise figure ;PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHzOutlineCMPAK-42314 1. Emitter2. Collector3. Emitter4. BaseNote: Marking is XP-.2SC5594Absolute Maximum
2sc5544.pdf
2SC5544Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-691 (Z)1st. EditionNov. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is YZ-.2SC5544Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to bas
2sc5543.pdf
2SC5543Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-690 (Z)1st. EditionNov. 1998Features Super compact package;(1.4 0.8 0.59mm) Capable low voltage operation ;(VCE = 1V)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is YA-.2SC5543Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to bas
2sc5585.pdf
2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Current. Low VCE(sat). VCE(sat)0.25V (@IC=200mA / IB=10mA) A Complement of 2SC4738. M33Top View C BApplication 11 2 General Purpose Amplification. L 2KEMARKING DH
2sc5585.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsSOT-523 32SC5585 TRANSISTOR (NPN) FEATURES High current. Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA11. BASE 22. EMITTERMARKING: BX 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector- Base Voltage 15 V VCEO C
2sc5586 2sc5830 2sc5924.pdf
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2sc5585.pdf
2SC5585SOT-523 Transistor(NPN)1. BASE SOT-5232. EMITTER 3. COLLECTOR Features High current. Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA MARKING: BX Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-B
2sc5585.pdf
2SC5585NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:SOT-523(SC-75)* High current.* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mAMAXIMUM RATINGS (TA=25Cunless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO 15 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 6 VCollector Current Continuous IC 500 mACollector Dissipa
2sc5548a.pdf
SMD Type TransistorsNPN Transistors2SC5548ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High speed switching High collector breakdown voltage High DC current gain0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Sym
2sc5570t7tl.pdf
2SC5570T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 6 VEBOI Collector
2sc5570.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5570DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Ba
2sc5586.pdf
isc Silicon NPN Power Transistor 2SC5586DESCRIPTIONHigh Collector-Base Voltage-: V = 900V(Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBO
2sc5548.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5548DESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current swi
2sc5552.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5552DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation VoltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)
2sc5516.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5516DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sc5548a.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5548ADESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters and
2sc5584.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC5584DESCRIPTIONSilicon NPN triple diffusion mesa typeHigh Switching SpeedHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)
2sc5517.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5517DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedWide Area of Safe OperationBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsAB
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050