Справочник транзисторов. 2N6045

 

Биполярный транзистор 2N6045 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N6045
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 75 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 200 pf
   Статический коэффициент передачи тока (hfe): 1200
   Корпус транзистора: TO220AB

 Аналоги (замена) для 2N6045

 

 

2N6045 Datasheet (PDF)

 ..1. Size:241K  motorola
2n6040 2n6041 2n6042 2n6043 2n6044 2n6045.pdf

2N6045
2N6045

Order this documentMOTOROLAby 2N6040/DSEMICONDUCTOR TECHNICAL DATAPNPPlastic Medium-Power2N6040Complementary SiliconTransistorsthru. . . designed for generalpurpose amplifier and lowspeed switching applications.*2N6042 High DC Current Gain NPNhFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc 2N6043VCEO(sus

 ..2. Size:73K  inchange semiconductor
2n6043 2n6044 2n6045.pdf

2N6045
2N6045

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6043 2N6044 2N6045 DESCRIPTION With TO-220C package Complement to type 2N6040/6041/6042 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For general-purpose amplifier and low-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;co

 0.1. Size:301K  onsemi
2n6040g 2n6042g 2n6043g 2n6045g.pdf

2N6045
2N6045

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N6045Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc60 -

 0.2. Size:83K  onsemi
2n6040g 2n6040g 2n6045g.pdf

2N6045
2N6045

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 0.3. Size:83K  onsemi
2n6045g.pdf

2N6045
2N6045

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 0.4. Size:199K  inchange semiconductor
2n6045g.pdf

2N6045
2N6045

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2N6045GDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CComplement to Type 2N6042GPb-Free packageMinimum Lot-to-Lot variations for robust device

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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