2N6045 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6045
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1200
Noise Figure, dB: -
Package: TO220AB
2N6045 Transistor Equivalent Substitute - Cross-Reference Search
2N6045 Datasheet (PDF)
2n6040 2n6041 2n6042 2n6043 2n6044 2n6045.pdf
Order this documentMOTOROLAby 2N6040/DSEMICONDUCTOR TECHNICAL DATAPNPPlastic Medium-Power2N6040Complementary SiliconTransistorsthru. . . designed for generalpurpose amplifier and lowspeed switching applications.*2N6042 High DC Current Gain NPNhFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc 2N6043VCEO(sus
2n6043 2n6044 2n6045.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6043 2N6044 2N6045 DESCRIPTION With TO-220C package Complement to type 2N6040/6041/6042 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For general-purpose amplifier and low-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;co
2n6040g 2n6042g 2n6043g 2n6045g.pdf
PNP - 2N6040, 2N6042,NPN - 2N6043, 2N6045Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc60 -
2n6040g 2n6040g 2n6045g.pdf
PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (
2n6045g.pdf
PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (
2n6045g.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2N6045GDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CComplement to Type 2N6042GPb-Free packageMinimum Lot-to-Lot variations for robust device
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
