2SC5591A - Даташиты. Аналоги. Основные параметры

Horizontal Deflection Transistor Series for TV Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe- operation, despite an absolutely minimal chip area which allows very compact package configuration. T

2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACT

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5599 50 pcs (Non reel) 8 mm wide embossed

Transistors 2SC5592 Silicon NPN epitaxial planer type Unit mm For DC-DC converter 0.40+0.10 0.05 0.16+0.10 0.06 For various driver circuits 3 Features 1 2 Low collector to emitter saturation voltage VCE(sat) , large current (0.95) (0.95) capacitance 1.9 0.1 High-speed switching 2.90+0.20 0.05 Mini type 3-pin package, allowing downsizing and thinning o

Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra

2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 (Z) 1st. Edition Nov. 2000 Features High gain bandwidth product fT = 24 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note Marking is XP- . 2SC5594 Absolute Maximum