SEMICONDUCTOR KTC3203ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES B CComplementary to KTA1271AN DIM MILLIMETERSA 4.70 MAXMAXIMUM RATING (Ta=25) EKB 4.80 MAXGC 3.70 MAXCHARACTERISTIC SYMBOL RATING UNIT DD 0.45E 1.00VCBO Collector-Base Voltage 35 VF 1.27G 0.85VCEOCollector-Emitter Voltage 30 VH 0.45_HJ 14.

SEMICONDUCTOR KTC3203TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTA1271.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO Collector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.

KTC3203(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Complementary to KTA1271 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC 625 mWCollector Power Dissipation Dimen

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthKTC3205Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Power Dissipation: 1W (Tamb=25 ) Collector Current: 2APlastic-Encapsulate Collector-base Voltage: 30V Epoxy meets UL 94 V-0 flammability ratingTransistor Moisture Sensitivity Level 1 Ma

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER General Purpose Application Switching Application 2. COLLECTOR 3. BASE Equivalent Circuit

SEMICONDUCTOR KTC3204TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES BComplementary to KTA1272.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAXMAXIMUM RATING (Ta=25)_D 2.40 + 0.15E 1.27CHARACTERISTIC SYMBOL RATING UNITF 2.30C_+G 14.00 0.50VCBO Collector-Base Voltage 35 VH 0.60 MAXJ 1.05E EVCEOCollecto

SEMICONDUCTOR KTC3200TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.B CFEATURESThe KTC3200 is a transistor for low frequency and low noise applications.This device is designed to ower noise figure in the region of low signalsource impedance, and to lower the pulse noise. N DIM MILLIMETERSThis is recommended for the first stages of equalizer

SEMICONDUCTOR KTC3207TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DIRVER APPLICATION.B DCOLOR TV CHROMA OUTPUT APPLICATION.FEATURESDIM MILLIMETERSPHigh Voltage : V(BR)CEO=300V.DEPTH:0.2A 7.20 MAXSmall Collector Output Capacitance : Cob=3.0pF(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G

SEMICONDUCTOR KTC3207TTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DRIVER APPLICATION.COLOR TV CHROMA OUTPUT APPLICATION.EBKDIM MILLIMETERSFEATURES_A 2.9 + 0.2B 1.6+0.2/-0.1High Voltage : V(BR)CEO=300V_C 0.70 + 0.0523Small Collector Output Capacitance : Cob=3.0pF(Typ.) _D 0.4 + 0.1E 2.8+0.2/-0.3Comp

SEMICONDUCTOR KTC3202TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESExcellent hFE Linearity: hFE(2)=25(Min.) at VCE=6V, IC=400mA.N DIM MILLIMETERSComplementary to KTA1270.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERI

SEMICONDUCTOR KTC3209TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. FEATURESLow Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A)High Speed Switching Time : tstg=1.0 S(Typ.)Complementary to KTA1281.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 50 VVCEOCollector-Emi

SEMICONDUCTOR KTC3205TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION.B DFEATURES Complementary to KTA1273.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 30 V H 0.55 MAXFF_J 14.00 + 0.50VCE

SEMICONDUCTOR KTC3206TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORBLACK AND WHITE TV VIDEO OUTPUT APLICATION. HIGH VOLTAGE SWITCHING APPLICATION.B DFEATURESHigh Breakdown Voltage : VCEO=150V(Min.).DIM MILLIMETERSPLow Output Capacitance : Cob=5.0pF(Max.).DEPTH:0.2A 7.20 MAXHigh Transition Frequency : fT=120MHz(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MA

KTC3205 TRANSISTOR (NPN) TO-92L 1. EMITTER FEATURES 2. COLLECTOR Complementary to KTA1273 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W TJ Juncti

KTC3205 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.800 8.200 Complementary to KTA1273 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.3500.55013.800VCBO Collector-Base Voltage 30 V14.200VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3202(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features General purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mAPC 625 mWCollector Po

KTC3206 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 High Breakdown Voltage : VCEO=150V(Min.) 8.200 Low Output Capacitance : Cob=5.0pF(Max.) 0.600High Transition Frequency : fT=120MHz(Typ.). 0.8000.3500.550MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Value Units Parameter

KTC3200 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,FELow noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

KTC3205T(BR3DG3205T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features KTA1273T(BR3CG1273T)Complementary pair with KTA1273T(BR3CG1273T). / Applications High current application. / Equivalent Circuit

DIP Type TransistorsNPN TransistorsKTC3202Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTA12700.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter -

DIP Type TransistorsNPN TransistorsKTC3209TO-92LUnit:mm4.9 0.20.7 0.1 Features Low Saturation Voltage0.45 0.1 High Speed Switching Time Complementary to KTA128121 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50

DIP Type TransistorsNPN TransistorsKTC3206TO-92LUnit:mm4.9 0.2 Features0.7 0.1 High Breakdown Voltage High Transition Frequency0.45 0.1 Complementary to KTA102421 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200

KTC3209(3DA3209) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, KTA1281(3CA1281) Features: Low saturation voltage, high speed switching time, complementary to KTA1281(3CA1281). /Absolute maximum ratings(Ta=25)