KTC3730F - Даташиты. Аналоги. Основные параметры

SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B Small rbb Cc (Typ. 4pS). DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 MAXIMUM RATING (Ta=25 ) _ + D 0.2 0.05 _ + E 1.0 0.05 CHARACTERISTIC SYMBOL RATING UNIT _ + G 0.35 0.05 _ + J 0.1

SEMICONDUCTOR KTC3730V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. Small rbb Cc (Typ. 4pS). DIM MILLIMETERS 2 _ A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ + D 0.3 0.05 _ E 1.2 + 0.05 MAXIMUM RATING (Ta=25 ) _ G 0.8 + 0.05 H 0.40 P P CHARACTERISTIC SYMBOL RATING UNIT _ J 0.12 +

SEMICONDUCTOR KTC3730U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.00 0.20 + D Small rbb Cc (Typ. 4pS). 2 _ + B 1.25 0.15 _ C 0.90 0.10 + 1 3 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L 0.70

SEMICONDUCTOR KTC3708U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR High frequency amplifier transistor, RF switching application. E FEATURES M B M DIM MILLIMETERS Very low on resistance (RON). _ A 2.00 0.20 + D 2 Low capacitance. _ + B 1.25 0.15 _ C 0.90 + 0.10 3 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10

SEMICONDUCTOR KTC3770T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E B FEATURES K DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 NF=1.1dB, S21e 2=11dB (f=1GHz). _ C 0.70 + 0.05 2 3 _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ F 1.9 + 0.2 1 G 0.95 _ H 0.16 + 0.05 MAXIMUM RATING (Ta=25 ) I 0.00-0.10 J 0.25+0.25/-

SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.00 0.20 + D 2 NF=1.1dB, S21e 2=11dB (f=1GHz). _ + B 1.25 0.15 _ C 0.90 + 0.10 3 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L 0.70

SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, S21e 2=11dB (f=1GHz). DIM MILLIMETERS 2 _ A 1.2 + 0.05 _ B 0.8 + 0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 MAXIMUM RATING (Ta=25 ) _ G 0.8 + 0.05 H 0.40 P P _ J 0.12 + 0.05 CHARACTERISTIC SYMBO

SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.00 0.20 + D 2 NF=1.2dB, S21e 2=13dB (f=1GHz). _ + B 1.25 0.15 _ C 0.90 + 0.10 3 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L 0.70

SEMICONDUCTOR KTC3770UL TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES C 1 4 Low Noise Figure, High Gain. NF=1.1dB, S21e 2=11dB (f=1GHz). A DIM MILLIMETERS _ A 1.0 0.05 + _ B + 0.6 0.05 2 +0.02 3 C 0.36 - 0.03 B _ D 0.25 + 0.03 _ E 0.15 + 0.03 MAXIMUM RATING (Ta=25 ) _ F 0.65 + 0.03 H 2 3 _ G 0.35 + 0.03 CHARACTERI

SEMICONDUCTOR KTC3780U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Noise Figure, High Gain. _ A 2.00 0.20 + D NF=1.4dB, S21e 2=12dB (f=1GHz). 2 _ + B 1.25 0.15 _ C 0.90 + 0.10 1 3 D 0.3+0.10/-0.05 _ + E 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.10 L

SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B NF=1.1dB, S21e 2=11dB (f=1GHz). DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 MAXIMUM RATING (Ta=25 ) _ + D 0.2 0.05 _ + E 1.0 0.05 CHARACTERISTIC SYMBOL RATING UNIT _ + G 0.35 0.05 _

SEMICONDUCTOR KTC3770S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Low Noise Figure, High Gain. _ + A 2.93 0.20 B 1.30+0.20/-0.15 NF=1.1dB, S21e 2=11dB (f=1GHz). C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P

SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. L B L NF=1.2dB, S21e 2=13dB (f=1GHz). DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATIN