Биполярный транзистор KRA225M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRA225M
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 1 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 56
Корпус транзистора: TO-92M
KRA225M Datasheet (PDF)
kra221m-kra226m.pdf
SEMICONDUCTOR KRA221M~KRA226MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias Resistors.DIM MILLIMETERSOSimplify Circuit Design.A 3.20 MAXHM B 4.30 MAXReduce a Quantity of Parts and Manufacturing Process.C 0.55 MAX_D 2.40 + 0.15High Output Current :-8
kra222s-kra226s.pdf
SEMICONDUCTOR KRA222S~KRA226STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors. L B LDIM MILLIMETERSSimplify Circuit Design._+A 2.93 0.20B 1.30+0.20/-0.15Reduce a Quantity of Parts and Manufacturing Process.C 1.30 MAX2High Output Curren
kra221m-kra226m 1.pdf
SEMICONDUCTOR KRA221M~KRA226MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias Resistors.DIM MILLIMETERSOSimplify Circuit Design.A 3.20 MAXHM B 4.30 MAXReduce a Quantity of Parts and Manufacturing Process.C 0.55 MAXHigh Output Current :-800mA. _D
kra221-kra226.pdf
SEMICONDUCTOR KRA221~KRA226TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKHigh Output Current :-800mA.B 4.80 MAXGC 3.70 MAX
kra221s.pdf
SEMICONDUCTOR KRA221STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors. L B LDIM MILLIMETERSSimplify Circuit Design._+A 2.93 0.20B 1.30+0.20/-0.15Reduce a Quantity of Parts and Manufacturing Process.C 1.30 MAX2High Output Current :-800m
kra221s-kra226s.pdf
SEMICONDUCTOR KRA221S~KRA226STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15C 1.30 MAXSimplify Circuit Design.23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Reduce a Quantity of Parts and Man
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MPS6570A
History: MPS6570A
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050