2N605 datasheet, аналоги, основные параметры
Наименование производителя: 2N605
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 90 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 15 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO5
Аналоги (замена) для 2N605
- подборⓘ биполярного транзистора по параметрам
2N605 даташит
0.1. Size:209K motorola
2n6055 2n6056.pdf 
Order this document MOTOROLA by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 Darlington Complementary 2N6056* Silicon Power Transistors *Motorola Preferred Device . . . designed for general purpose amplifier and low frequency switching applications. DARLINGTON High DC Current Gain 8 AMPERE hFE = 3000 (Typ) @ IC = 4.0 Adc COMPLEMENTARY Collector Emitter Sustai
0.2. Size:275K motorola
2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf 
Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary thru Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applications. 2N6052* High DC Current Gain NPN hFE = 3500 (Typ) @ IC = 5.0 Adc Collector Emitter Sustaining Voltage @ 100 mA 2N6057 VCEO(sus) = 60 Vdc (
0.3. Size:42K st
2n6059.pdf 
2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-3 DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mount
0.4. Size:132K onsemi
2n6052g.pdf 
2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low frequency switching applications. Features http //onsemi.com High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc 12 AMPERE Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON Monolit
0.5. Size:159K comset
2n6055-2n6053.pdf 
2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N6053 VCEO #Collector-Emitter Volta
0.6. Size:217K comset
2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf 
POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORS SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.
0.8. Size:195K bocasemi
2n6050 2n6051 2n6052 2n6057 2n6058 2n6059.pdf 
A Boca Semiconductor Corp. BSC A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com
0.9. Size:109K jmnic
2n6058 2n6059.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION With TO-3 package High gain High current High dissipation Complement to type 2N5883/2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline
0.10. Size:251K inchange semiconductor
2n6059.pdf 
isc Silicon NPN Darlingtion Power Transistor 2N6059 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 300 (Min) @ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching
0.11. Size:131K inchange semiconductor
2n6053 2n6054.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6055;2N6056 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T
0.12. Size:195K inchange semiconductor
2n6054.pdf 
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6054 DESCRIPTION Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage V = -2.0V(Max)@ I = -4A CE(sat) C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to type 2N6056 Minimum Lot-to-Lot variations for robust device performance and reliable operation
0.13. Size:105K inchange semiconductor
2n6057.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type 2N6050 APPLICATIONS Designed for general purpose amplifier and low frequency switching ap
0.14. Size:195K inchange semiconductor
2n6056.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6056 DESCRIPTION Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@I = 4.0A CE (sat) C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to type 2N6054 Minimum Lot-to-Lot variations for robust device performance and reliable operation A
0.15. Size:132K inchange semiconductor
2n6055 2n6056.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6053;2N6054 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sy
0.16. Size:184K inchange semiconductor
2n6052.pdf 
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I = -6A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to type 2N6059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo
0.17. Size:131K inchange semiconductor
2n6058 2n6059.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION With TO-3 package High current ;high dissipation DARLINGTON Complement to type 2N5883;2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-
Другие транзисторы: 2N6044, 2N6045, 2N6046, 2N6047, 2N6048, 2N6049, 2N6049E, 2N604A, 8050, 2N6050, 2N6051, 2N6052, 2N6053, 2N6054, 2N6055, 2N6056, 2N6057
