2N605 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby 2N6055/DSEMICONDUCTOR TECHNICAL DATANPN2N6055Darlington Complementary2N6056*Silicon Power Transistors*Motorola Preferred Device. . . designed for generalpurpose amplifier and low frequency switching applications.DARLINGTON High DC Current Gain 8 AMPEREhFE = 3000 (Typ) @ IC = 4.0 AdcCOMPLEMENTARY CollectorEmitter Sustai

Order this documentMOTOROLAby 2N6050/DSEMICONDUCTOR TECHNICAL DATAPNP2N6050Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and low frequency switching applications.2N6052* High DC Current Gain NPNhFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057VCEO(sus) = 60 Vdc (

2N6059SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERREDSALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 12APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-3DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPNtransistor in monolithic Darlington configurationmount

2N6052Preferred Device Darlington ComplementarySilicon Power TransistorsThis package is designed for general-purpose amplifier and lowfrequency switching applications.Featureshttp://onsemi.com High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc12 AMPERE Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON Monolit

2N6053 PNP2N6055 NPNCOMPLEMENTARY POWER DARLINGTONThe 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case.They are intended for use in power linear and switching applications.The complementary NPN type is the 2N6055ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value Unit2N6053VCEO #Collector-Emitter Volta

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORSSILICON TRANSISTORSThe 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.

AAAA

ABoca Semiconductor Corp. BSCABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION With TO-3 package High gain High current High dissipation Complement to type 2N5883/2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline

isc Silicon NPN Darlingtion Power Transistor 2N6059DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 300 (Min) @ I = 5AFE CCollector-Emitter Sustaining Voltage-V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low frequencyswitching

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6055;2N6056 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6054DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsLow Collector-Emitter Saturation Voltage: V = -2.0V(Max)@ I = -4ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to type 2N6056Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type 2N6050 APPLICATIONSDesigned for general purpose amplifier and low frequency switching ap

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2N6056DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@I = 4.0ACE (sat) CCollector-Emitter Sustaining Voltage-V = 80V(Min)CEO(SUS)Complement to type 2N6054Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6053;2N6054 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sy

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6052DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -6AFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION With TO-3 package High current ;high dissipation DARLINGTON Complement to type 2N5883;2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-