2SC2411KQLT1 - Даташиты. Аналоги. Основные параметры

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SC2411KQLT1G NPN silicon Series FEATURE S-L2SC2411KQLT1G Epitaxial planar type Series Complementary to L2SA1036K We declare that the material of product are Halogen Free and 3 compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101

2SC2411K Datasheet Medium Power Transistor (32V, 500mA) lOutline l Parameter Value SMT3 VCEO 32V IC 500mA 2SC2411K SOT-346 lFeatures l 1) High ICMAX lInner circuit l ICMAX=0.5A 2)Low VCE(sat) Optimal for low voltage operation. 3)Complements the 2SA1036K. lApplication l DRIVING CIRCUIT, LOW FREQ

2SC2411KFRA 2SC2411K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units mm) 1) High ICMax. 2SC2411KFRA 2SC2411K ICMax. = 0.5A 2) Low VCE(sat). 2.9 0.2 Optimal for low voltage operation. 1.1+0.2 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 2SA1036KFRA 3) Complements the 2SA1036K. (1) (2) 0 0.1 (3)

2SC2411K NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t

FM120-M WILLAS 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN silicon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2411KRLT1G FEATURES S-L2SC2411KRLT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT 23 DEVICE MARK

L2SC2411KRLT1G S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mark

2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW FEATURES 0.120(3.04) NPN epitaxial silicon,planar design 0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DAT

CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST