2N6057 - описание и поиск аналогов

Order this document MOTOROLA by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 Darlington Complementary thru Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applications. 2N6052* High DC Current Gain NPN hFE = 3500 (Typ) @ IC = 5.0 Adc Collector Emitter Sustaining Voltage @ 100 mA 2N6057 VCEO(sus) = 60 Vdc (

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type 2N6050 APPLICATIONS Designed for general purpose amplifier and low frequency switching ap

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORS SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.

Order this document MOTOROLA by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 Darlington Complementary 2N6056* Silicon Power Transistors *Motorola Preferred Device . . . designed for general purpose amplifier and low frequency switching applications. DARLINGTON High DC Current Gain 8 AMPERE hFE = 3000 (Typ) @ IC = 4.0 Adc COMPLEMENTARY Collector Emitter Sustai

2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-3 DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mount

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low frequency switching applications. Features http //onsemi.com High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc 12 AMPERE Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON Monolit

2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N6053 VCEO #Collector-Emitter Volta

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION With TO-3 package High gain High current High dissipation Complement to type 2N5883/2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline

isc Silicon NPN Darlingtion Power Transistor 2N6059 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 300 (Min) @ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6055;2N6056 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (T

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6054 DESCRIPTION Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage V = -2.0V(Max)@ I = -4A CE(sat) C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to type 2N6056 Minimum Lot-to-Lot variations for robust device performance and reliable operation

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6056 DESCRIPTION Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@I = 4.0A CE (sat) C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to type 2N6054 Minimum Lot-to-Lot variations for robust device performance and reliable operation A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6053;2N6054 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sy

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 750 (Min) @ I = -6A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to type 2N6059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION With TO-3 package High current ;high dissipation DARLINGTON Complement to type 2N5883;2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-