2N6057 Datasheet and Replacement

Order this documentMOTOROLAby 2N6050/DSEMICONDUCTOR TECHNICAL DATAPNP2N6050Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and low frequency switching applications.2N6052* High DC Current Gain NPNhFE = 3500 (Typ) @ IC = 5.0 Adc CollectorEmitter Sustaining Voltage @ 100 mA 2N6057VCEO(sus) = 60 Vdc (

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type 2N6050 APPLICATIONSDesigned for general purpose amplifier and low frequency switching ap

POWER COMPLEMENTARY POWER COMPLEMENTARY SILICON TRANSISTORSSILICON TRANSISTORSThe 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.

Order this documentMOTOROLAby 2N6055/DSEMICONDUCTOR TECHNICAL DATANPN2N6055Darlington Complementary2N6056*Silicon Power Transistors*Motorola Preferred Device. . . designed for generalpurpose amplifier and low frequency switching applications.DARLINGTON High DC Current Gain 8 AMPEREhFE = 3000 (Typ) @ IC = 4.0 AdcCOMPLEMENTARY CollectorEmitter Sustai

2N6059SILICON NPN POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERREDSALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 12APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-3DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPNtransistor in monolithic Darlington configurationmount

2N6052Preferred Device Darlington ComplementarySilicon Power TransistorsThis package is designed for general-purpose amplifier and lowfrequency switching applications.Featureshttp://onsemi.com High DC Current Gain hFE = 3500 (Typ) @ IC = 5.0 Adc12 AMPERE Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 100 Vdc (Min) COMPLEMENTARY SILICON Monolit

2N6053 PNP2N6055 NPNCOMPLEMENTARY POWER DARLINGTONThe 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case.They are intended for use in power linear and switching applications.The complementary NPN type is the 2N6055ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value Unit2N6053VCEO #Collector-Emitter Volta

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6058/2N6059 DESCRIPTION With TO-3 package High gain High current High dissipation Complement to type 2N5883/2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline

isc Silicon NPN Darlingtion Power Transistor 2N6059DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 300 (Min) @ I = 5AFE CCollector-Emitter Sustaining Voltage-V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low frequencyswitching

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6055;2N6056 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6054DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsLow Collector-Emitter Saturation Voltage: V = -2.0V(Max)@ I = -4ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to type 2N6056Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2N6056DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@I = 4.0ACE (sat) CCollector-Emitter Sustaining Voltage-V = 80V(Min)CEO(SUS)Complement to type 2N6054Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6055 2N6056 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6053;2N6054 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sy

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6052DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -6AFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6058 2N6059 DESCRIPTION With TO-3 package High current ;high dissipation DARLINGTON Complement to type 2N5883;2N5884 APPLICATIONS They are intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-