Биполярный транзистор HLB120A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: HLB120A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO-92
HLB120A Datasheet (PDF)
hlb120a.pdf
Spec. No. : HE6412HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HLB120ANPN Triple Diffused Planar Type High Voltage TransistorsDescriptionThe HLB120A is a medium power transistor designed for use in switchingapplications.TO-92Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S
hlb121.pdf
UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1* High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L
hlb123d.pdf
Spec. No. : HE6603HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5HLB123DNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123D is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126ML High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb122i.pdf
Spec. No. : HE9030HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HLB122INPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HLB122I is a medium power transistor designed for use in switchingapplications.TO-251Features High breakdown voltage Low collector saturation voltage Fast switching s
hlb125he.pdf
Spec. No. : HE200214HI-SINCERITYIssued Date : 2002.09.01Revised Date : 2004.11.08MICROELECTRONICS CORP.Page No. : 1/5HLB125HENPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB125HE is designed for lighting applications and low switch-mode powersupplies. And it is high voltage capability and high switching speeds.TO-220Features High Speed Switching Low Saturation
hlb124e.pdf
Spec. No. : HE6727HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2004.11.03MICROELECTRONICS CORP.Page No. : 1/5HLB124ENPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB124E is designed for high voltage, high speed switching inductive circuits,and amplifier applications.FeaturesTO-220 High Speed Switching Low Saturation Voltage High ReliabilityAbsolute
hlb121i.pdf
Spec. No. : HE9027HI-SINCERITYIssued Date : 1996.11.06Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HLB121INPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HLB121I is a medium power transistor designed for use in switchingapplications.TO-251Features High breakdown voltage Low collector saturation voltage Fast switching s
hlb123t.pdf
Spec. No. : HT200402HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4HLB123TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123T is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126 High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb121a.pdf
Spec. No. : HA200112 HI-SINCERITY Issued Date : 2001.04.01 Revised Date : 2007.09.29 MICROELECTRONICS CORP. Page No. : 1/4 HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching applications. TO-92 Features High breakdown voltage Low collector saturation voltage Fa
hlb121d.pdf
Spec. No. : HD200205HI-SINCERITYIssued Date : 2002.05.01Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/4HLB121DNPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HLB121D is a medium power transistor designed for use in switchingapplications.TO-126MLFeatures High breakdown voltage Low collector saturation voltage Fast switchi
hlb123i.pdf
Spec. No. : HI200202HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HLB123INPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123I is designed for high voltage. High speed switching inductive circuitsand amplifier applications.TO-251Features High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb123sa.pdf
Spec. No. : HA200601 HI-SINCERITY Issued Date : 2006.12.01 Revised Date : 2009.07,02 MICROELECTRONICS CORP. Page No. : 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-92 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings Pa
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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