All Transistors. HLB120A Datasheet

 

HLB120A Datasheet, Equivalent, Cross Reference Search


   Type Designator: HLB120A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-92

 HLB120A Transistor Equivalent Substitute - Cross-Reference Search

   

HLB120A Datasheet (PDF)

 ..1. Size:45K  hsmc
hlb120a.pdf

HLB120A HLB120A

Spec. No. : HE6412HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HLB120ANPN Triple Diffused Planar Type High Voltage TransistorsDescriptionThe HLB120A is a medium power transistor designed for use in switchingapplications.TO-92Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S

 9.1. Size:130K  utc
hlb121.pdf

HLB120A HLB120A

UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1* High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L

 9.2. Size:47K  hsmc
hlb123d.pdf

HLB120A HLB120A

Spec. No. : HE6603HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5HLB123DNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123D is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126ML High Speed Switching Low Saturation Voltage High ReliabilityAbsolut

 9.3. Size:51K  hsmc
hlb122i.pdf

HLB120A HLB120A

Spec. No. : HE9030HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HLB122INPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HLB122I is a medium power transistor designed for use in switchingapplications.TO-251Features High breakdown voltage Low collector saturation voltage Fast switching s

 9.4. Size:50K  hsmc
hlb125he.pdf

HLB120A HLB120A

Spec. No. : HE200214HI-SINCERITYIssued Date : 2002.09.01Revised Date : 2004.11.08MICROELECTRONICS CORP.Page No. : 1/5HLB125HENPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB125HE is designed for lighting applications and low switch-mode powersupplies. And it is high voltage capability and high switching speeds.TO-220Features High Speed Switching Low Saturation

 9.5. Size:46K  hsmc
hlb124e.pdf

HLB120A HLB120A

Spec. No. : HE6727HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2004.11.03MICROELECTRONICS CORP.Page No. : 1/5HLB124ENPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB124E is designed for high voltage, high speed switching inductive circuits,and amplifier applications.FeaturesTO-220 High Speed Switching Low Saturation Voltage High ReliabilityAbsolute

 9.6. Size:44K  hsmc
hlb121i.pdf

HLB120A HLB120A

Spec. No. : HE9027HI-SINCERITYIssued Date : 1996.11.06Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HLB121INPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HLB121I is a medium power transistor designed for use in switchingapplications.TO-251Features High breakdown voltage Low collector saturation voltage Fast switching s

 9.7. Size:40K  hsmc
hlb123t.pdf

HLB120A HLB120A

Spec. No. : HT200402HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4HLB123TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123T is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126 High Speed Switching Low Saturation Voltage High ReliabilityAbsolut

 9.8. Size:47K  hsmc
hlb121a.pdf

HLB120A HLB120A

Spec. No. : HA200112 HI-SINCERITY Issued Date : 2001.04.01 Revised Date : 2007.09.29 MICROELECTRONICS CORP. Page No. : 1/4 HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching applications. TO-92 Features High breakdown voltage Low collector saturation voltage Fa

 9.9. Size:38K  hsmc
hlb121d.pdf

HLB120A HLB120A

Spec. No. : HD200205HI-SINCERITYIssued Date : 2002.05.01Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/4HLB121DNPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HLB121D is a medium power transistor designed for use in switchingapplications.TO-126MLFeatures High breakdown voltage Low collector saturation voltage Fast switchi

 9.10. Size:53K  hsmc
hlb123i.pdf

HLB120A HLB120A

Spec. No. : HI200202HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HLB123INPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123I is designed for high voltage. High speed switching inductive circuitsand amplifier applications.TO-251Features High Speed Switching Low Saturation Voltage High ReliabilityAbsolut

 9.11. Size:187K  hsmc
hlb123sa.pdf

HLB120A HLB120A

Spec. No. : HA200601 HI-SINCERITY Issued Date : 2006.12.01 Revised Date : 2009.07,02 MICROELECTRONICS CORP. Page No. : 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-92 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings Pa

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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