HLB120A Datasheet. Specs and Replacement
Type Designator: HLB120A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-92
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HLB120A datasheet
..1. Size:45K hsmc
hlb120a.pdf 
Spec. No. HE6412 HI-SINCERITY Issued Date 1998.12.01 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/4 HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in switching applications. TO-92 Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S... See More ⇒
9.1. Size:130K utc
hlb121.pdf
UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number HLB121L... See More ⇒
9.2. Size:47K hsmc
hlb123d.pdf
Spec. No. HE6603 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126ML High Speed Switching Low Saturation Voltage High Reliability Absolut... See More ⇒
9.3. Size:51K hsmc
hlb122i.pdf
Spec. No. HE9030 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/5 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching applications. TO-251 Features High breakdown voltage Low collector saturation voltage Fast switching s... See More ⇒
9.4. Size:50K hsmc
hlb125he.pdf
Spec. No. HE200214 HI-SINCERITY Issued Date 2002.09.01 Revised Date 2004.11.08 MICROELECTRONICS CORP. Page No. 1/5 HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. TO-220 Features High Speed Switching Low Saturation... See More ⇒
9.5. Size:46K hsmc
hlb124e.pdf
Spec. No. HE6727 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2004.11.03 MICROELECTRONICS CORP. Page No. 1/5 HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications. Features TO-220 High Speed Switching Low Saturation Voltage High Reliability Absolute... See More ⇒
9.6. Size:44K hsmc
hlb121i.pdf
Spec. No. HE9027 HI-SINCERITY Issued Date 1996.11.06 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/4 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching applications. TO-251 Features High breakdown voltage Low collector saturation voltage Fast switching s... See More ⇒
9.7. Size:40K hsmc
hlb123t.pdf
Spec. No. HT200402 HI-SINCERITY Issued Date 1993.05.15 Revised Date 2006.02.20 MICROELECTRONICS CORP. Page No. 1/4 HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126 High Speed Switching Low Saturation Voltage High Reliability Absolut... See More ⇒
9.8. Size:47K hsmc
hlb121a.pdf
Spec. No. HA200112 HI-SINCERITY Issued Date 2001.04.01 Revised Date 2007.09.29 MICROELECTRONICS CORP. Page No. 1/4 HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching applications. TO-92 Features High breakdown voltage Low collector saturation voltage Fa... See More ⇒
9.9. Size:38K hsmc
hlb121d.pdf
Spec. No. HD200205 HI-SINCERITY Issued Date 2002.05.01 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/4 HLB121D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121D is a medium power transistor designed for use in switching applications. TO-126ML Features High breakdown voltage Low collector saturation voltage Fast switchi... See More ⇒
9.10. Size:53K hsmc
hlb123i.pdf
Spec. No. HI200202 HI-SINCERITY Issued Date 2002.06.01 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/5 HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications. TO-251 Features High Speed Switching Low Saturation Voltage High Reliability Absolut... See More ⇒
9.11. Size:187K hsmc
hlb123sa.pdf
Spec. No. HA200601 HI-SINCERITY Issued Date 2006.12.01 Revised Date 2009.07,02 MICROELECTRONICS CORP. Page No. 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-92 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings Pa... See More ⇒
Detailed specifications: HJ122, HJ127, HJ13003, HJ3669, HJ667A, HJ669A, HJ772, HJ882, 2SC945, HLB121A, HLB121D, HLB121I, HLB122I, HLB123D, HLB123I, HLB123SA, HLB123T
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