2N6076 - описание и поиск аналогов

DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 0.135 - 0.145 1 2 3 (3.429 - 3.683) BVCEO . . . . 25 V (Min) 1 2 3 B C E hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES LOGOXYY 0.175 - 0.185 Storage Temperature -55 Degrees C to 150 Degrees C (4.450 - 4.700) 2N Op

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6071/D * 2N6071A,B * 2N6073A,B Sensitive Gate Triacs 2N6075A,B* Silicon Bidirectional Thyristors *Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-sta

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6071/D * 2N6071,A,B * 2N6073,A,B Sensitive Gate Triacs 2N6075,A,B* Silicon Bidirectional Thyristors *Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon TRIACs gate controlle

2N6077 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 275V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N6079 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 350V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N6078 MECHANICAL DATA Dimensions in mm(inches) NPN MULTI - EPITAXIAL 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) POWER TRANSISTOR max. 4.08(0.161) rad. 1 2 FEATURES HIGH VOLTAGE LOW SATURATION VOLTAGES HIGH RELIABILITY 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) APPLICATIONS min. POWER SWITCHING CIRCUITS TO 66(TO213AA

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage High breakdown voltage APPLICATIONS For horizontal deflection output stages of TV s and CRT s PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Abso

isc Silicon NPN Power Transistor 2N6078 DESCRIPTION Low Collector-Emitter Sustaining Voltage High voltage Low Collector-Emitter Saturation Voltage- 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear applications Power switching circuits ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION With TO-66 package Low collector saturation voltage High breakdown voltage APPLICATIONS For horizontal deflection output stages of TV s and CRT s PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolut