2N6076 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6076
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2N6076 Transistor Equivalent Substitute - Cross-Reference Search
2N6076 Datasheet (PDF)
2n6076.pdf
DISCRETE POWER & SIGNAL TECHNOLOGIES2N6076SILICON PNP SMALL SIGNAL TRANSISTOR 0.135 - 0.1451 2 3(3.429 - 3.683)BVCEO . . . . 25 V (Min) 1 2 3 B C EhFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA 0.175 - 0.185(4.450 - 4.700)ABSOLUTE MAXIMUM RATINGS (NOTE 1)TEMPERATURESLOGOXYY 0.175 - 0.185Storage Temperature -55 Degrees C to 150 Degrees C(4.450 - 4.700)2NOp
2n5172 2n6076 mps5172 mps6076.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf
2n6071 2n6073 2n6075.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6071/D*2N6071A,B*2N6073A,BSensitive Gate Triacs2N6075A,B*Silicon Bidirectional Thyristors*Motorola preferred devices. . . designed primarily for full-wave ac control applications, such as light dimmers,motor controls, heating controls and power supplies; or wherever full-wave silicongate controlled solid-sta
2n6071 2n6073 2n6075 .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6071/D*2N6071,A,B*2N6073,A,BSensitive Gate Triacs2N6075,A,B*Silicon Bidirectional Thyristors*Motorola preferred devices. . . designed primarily for full-wave ac control applications, such as light dimmers,motor controls, heating controls and power supplies; or wherever full-wave siliconTRIACsgate controlle
2n6077.pdf
2N6077Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6079.pdf
2N6079Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 350V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n6078.pdf
2N6078MECHANICAL DATADimensions in mm(inches)NPN MULTI - EPITAXIAL6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)POWER TRANSISTORmax.4.08(0.161)rad.1 2FEATURES HIGH VOLTAGE LOW SATURATION VOLTAGES HIGH RELIABILITY1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)APPLICATIONSmin. POWER SWITCHING CIRCUITSTO66(TO213AA
2n6077 2n6078 2n6079.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage High breakdown voltage APPLICATIONS For horizontal deflection output stages of TVs and CRTs PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Abso
2n6078.pdf
isc Silicon NPN Power Transistor 2N6078DESCRIPTIONLow Collector-Emitter Sustaining VoltageHigh voltageLow Collector-Emitter Saturation Voltage-100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLinear applicationsPower switching circuitsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU
2n6077 2n6078 2n6079.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6077 2N6078 2N6079 DESCRIPTION With TO-66 package Low collector saturation voltage High breakdown voltage APPLICATIONS For horizontal deflection output stages of TVs and CRTs PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolut
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
