November 2001SSR2N60B / SSU2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored

GenX3TM B3-Class VCES = 600VIXGH72N60B3IC110 = 72AIGBTsIXGT72N60B3VCE(sat) 1.80Vtfi(typ) = 90nsMedium Speed low Vsat PTIGBTs 5-40 kHz SwitchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC(TAB)EVGEM Transient 30 VIC25 TC = 2

IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

Preliminary Technical InformationGenX3TM B3-Class VCES = 600VIXGR72N60B3D1IGBT w/Diode IC110 = 40AVCE(sat) 1.80V(Electrically Isolated Back Surface)tfi(typ) = 90nsMedium Speed Low Vsat PT IGBTsfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES

GenX3TM B3-Class VCES = 600VIXGH72N60B3IC110 = 72AIGBTsIXGT72N60B3VCE(sat) 1.80Vtfi(typ) = 90nsMedium Speed low Vsat PTIGBTs 5-40 kHz SwitchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC(TAB)EVGEM Transient 30 VIC25 TC = 2

Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60B3H1IC110 = 40A(Electrically Isolated Back Surface)VCE(sat) 1.80Vtfi(typ) = 92nsMedium Speed Low Vsat PT IGBTfor 5-40 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continu

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGK72N60B3H1IC110 = 72Awith DiodeIXGX72N60B3H1VCE(sat) 1.8Vtfi(typ) = 92nsMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V (

IXGH 32N60BHiPerFASTTM IGBT VCES = 600 VIXGT 32N60BIC25 = 60 AIXGH 32N60BD1VCE(sat) = 2.3 VIXGT 32N60BD1tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsTO-268(IXGT)GVCES TJ = 25C to 150C 600 VECVCGR TJ = 25C to 150C; RGE = 1 M 600 V(TAB)VGES Continuous 20 VTO-247 ADVGEM Transient 30 V(IXGH)IC25 TC = 25C60 AIC90 TC = 90C3

IXGH 12N60BD1HiPerFASTTM IGBTVDSS = 600 VID25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collect

IXGH 32N60BU1 VCES = 600 VHiPerFASTTM IGBTIC25 = 60 Awith DiodeVCE(sat) = 2.3 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EG = Gate, C = Collector,IC25 TC = 25C60 AE = Emitter, TAB = CollectorIC90 TC = 90C32 AIC

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGK72N60B3H1IC110 = 72Awith DiodeIXGX72N60B3H1VCE(sat) 1.8Vtfi(typ) = 92nsMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V (

HiPerFASTTM IGBT IXGH 12N60BVDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collector,

HiPerFASTTM IGBT IXGH32N60B VCES = 600 VIC25 = 60 AVCE(sat) = 2.5 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C60 A EIC90 TC = 90C32 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 120 AE = Emitter, TAB = Col

IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =

FTU02N60B/FTD02N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 600V 5.5 1.9A Low Gate Charge (typical 7.4nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information

N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

Spec. No. : C164FP Issued Date : 2015.03.04 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS :600V RDS(ON) : 0.46 typ. MTN12N60BFP ID : 12A Description The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 2.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SMP

WFP2N60BWFP2N60BWFP2N60BWFP2N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V, R (Max 5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

WFF2N60BWFF2N60BWFF2N60BWFF2N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V,R (Max 5.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

WFU2N60BWFU2N60BWFU2N60BWFU2N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V,R (Max 5.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

WFD2N60BWFD2N60BWFD2N60BWFD2N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V,R (Max 5.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

SAMWIN SW2N60B N-channel MOSFET TO-220F IPAK DPAK TO-126 BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 4.5ohm RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typical 7.5nC) 2 Improved dv/dt Capability 1 2 1 2 1 100% Avalanche Tested 3 1 3 2 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is

Oct 2014 SE2N60B N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 600V such as fast switching time, low gate charge, RDS(ON) = 3.4 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin co