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2N60B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N60B

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.6 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO5

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2N60B Datasheet (PDF)

1.1. ssi2n60b.pdf Size:647K _upd-mosfet

2N60B
2N60B

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored

1.2. ssi2n60b ssw2n60b.pdf Size:647K _upd-mosfet

2N60B
2N60B

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored

 1.3. ssr2n60b ssu2n60b.pdf Size:645K _upd-mosfet

2N60B
2N60B

November 2001 SSR2N60B / SSU2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 600V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored

1.4. wff2n60b.pdf Size:613K _update_mosfet

2N60B
2N60B

WFF2N60B WFF2N60B WFF2N60B WFF2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 2A,600V,R (Max 5.0Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 9nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced u

 1.5. wfd2n60b.pdf Size:586K _update_mosfet

2N60B
2N60B

WFD2N60B WFD2N60B WFD2N60B WFD2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 2A,600V,R (Max 5.0Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 9nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced u

1.6. ssp2n60b sss2n60b.pdf Size:862K _fairchild_semi

2N60B
2N60B

SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC) planar, DMOS technology. • Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to • Fast swit

1.7. ssw2n60b ssi2n60b.pdf Size:648K _fairchild_semi

2N60B

1.8. ixgh72n60b3.pdf Size:186K _igbt

2N60B
2N60B

GenX3TM B3-Class VCES = 600V IXGH72N60B3 IC110 = 72A IGBTs IXGT72N60B3 ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ tfi(typ) = 90ns Medium Speed low Vsat PT IGBTs 5-40 kHz Switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C (TAB) E VGEM Transient ±30 V IC25 TC = 2

1.9. ixgh12n60b.pdf Size:33K _igbt

2N60B
2N60B

HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collector,

1.10. ixgh32n60bu1.pdf Size:137K _igbt

2N60B
2N60B

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C60 A E = Emitter, TAB = Collector IC90 TC = 90°C32 A IC

1.11. ixgk72n60b3h1.pdf Size:221K _igbt

2N60B
2N60B

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGK72N60B3H1 IC110 = 72A with Diode IXGX72N60B3H1 ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ tfi(typ) = 92ns Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V (

1.12. ixgh32n60b.pdf Size:34K _igbt

2N60B
2N60B

HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C60 A E IC90 TC = 90°C32 A G = Gate, C = Collector, ICM TC = 25°C, 1 ms 120 A E = Emitter, TAB = Col

1.13. ixgh12n60bd1.pdf Size:34K _igbt

2N60B
2N60B

IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collect

1.14. ixgp12n60b.pdf Size:69K _igbt

2N60B
2N60B

IXGA 12N60B VCES = 600 V HiPerFASTTM IGBT IXGP 12N60B IC25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G E VGEM Transient ±30 V IC25 TC = 25°C24 A IC90 TC = 90°C12 A TO-263 AA (IXGA) ICM TC =

1.15. ixgh32n60bd1.pdf Size:125K _igbt

2N60B
2N60B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

1.16. ixgr72n60b3d1.pdf Size:210K _igbt_a

2N60B
2N60B

Preliminary Technical Information GenX3TM B3-Class VCES = 600V IXGR72N60B3D1 IGBT w/Diode IC110 = 40A ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ (Electrically Isolated Back Surface) tfi(typ) = 90ns Medium Speed Low Vsat PT IGBTs for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES

1.17. ixgt72n60b3.pdf Size:186K _igbt_a

2N60B
2N60B

GenX3TM B3-Class VCES = 600V IXGH72N60B3 IC110 = 72A IGBTs IXGT72N60B3 ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ tfi(typ) = 90ns Medium Speed low Vsat PT IGBTs 5-40 kHz Switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C (TAB) E VGEM Transient ±30 V IC25 TC = 2

1.18. ixgr72n60b3h1.pdf Size:219K _igbt_a

2N60B
2N60B

Preliminary Technical Information TM VCES = 600V GenX3 600V IGBT IXGR72N60B3H1 IC110 = 40A (Electrically Isolated Back Surface) ≤ VCE(sat) ≤ ≤£ 1.80V ≤ ≤ tfi(typ) = 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continu

1.19. ixgt32n60bd1.pdf Size:125K _igbt_a

2N60B
2N60B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

1.20. ixgx72n60b3h1.pdf Size:221K _igbt_a

2N60B
2N60B

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGK72N60B3H1 IC110 = 72A with Diode IXGX72N60B3H1 ≤ VCE(sat) ≤ ≤£ 1.8V ≤ ≤ tfi(typ) = 92ns Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V (

1.21. ftu02n60b ftd02n60b.pdf Size:533K _ark-micro

2N60B
2N60B

FTU02N60B/FTD02N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features  Low ON Resistance 600V 5.5Ω 1.9A  Low Gate Charge (typical 7.4nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power Ordering Information

1.22. mdf2n60bth.pdf Size:861K _magnachip

2N60B
2N60B



1.23. wfp2n60b.pdf Size:549K _winsemi

2N60B
2N60B

WFP2N60B WFP2N60B WFP2N60B WFP2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 2A,600V, R (Max 5Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced u

1.24. wfu2n60b.pdf Size:576K _winsemi

2N60B
2N60B

WFU2N60B WFU2N60B WFU2N60B WFU2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 2A,600V,R (Max 5.0Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 9nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced u

Otros transistores... 2N6093 , 2N6094 , 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , TIP35C , 2N60C , 2N61 , 2N610 , 2N6100 , 2N6101 , 2N6102 , 2N6103 , 2N6104 .

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