Справочник транзисторов. 2N62

 

Биполярный транзистор 2N62 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N62
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.05 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
   Макcимальный постоянный ток коллектора (Ic): 0.02 A
   Предельная температура PN-перехода (Tj): 85 °C
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO23

 Аналоги (замена) для 2N62

 

 

2N62 Datasheet (PDF)

 0.1. Size:214K  motorola
2n6282 2n6283 2n6284 2n6285 2n6286 2n6287.pdf

2N62
2N62

Order this documentMOTOROLAby 2N6282/DSEMICONDUCTOR TECHNICAL DATANPN2N6282Darlington ComplementarythruSilicon Power Transistors. . . designed for generalpurpose amplifier and lowfrequency switching applica-2N6284*tions.PNP High DC Current Gain @ IC = 10 Adc 2N6285hFE = 2400 (Typ) 2N6282, 2N6283, 2N6284hFE = 4000 (Typ) 2N6285, 2N6286, 2N6287

 0.2. Size:180K  motorola
2n6251re.pdf

2N62
2N62

Order this documentMOTOROLAby 2N6251/DSEMICONDUCTOR TECHNICAL DATA2N6251High Voltage NPN Silicon PowerTransistors15 AMPEREPOWER TRANSISTOR. . . designed for high voltage inverters, switching regulators and line operatedNPN SILICONamplifier applications. Especially well suited for switching power supply applications.350 VOLTS High Voltage Breakdown Rating 175 WATTS

 0.3. Size:149K  motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf

2N62
2N62

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

 0.4. Size:169K  motorola
2n6274-75 2n6277 2n6274 2n6275 2n6277.pdf

2N62
2N62

Order this documentMOTOROLAby 2N6274/DSEMICONDUCTOR TECHNICAL DATA2N6274High-Power NPN Silicon2N6275Transistors2N6277*. . . designed for use in industrialmilitary power amplifer and switching circuit*Motorola Preferred Deviceapplications. High Collector Emitter Sustaining 50 AMPEREVCEO(sus) = 100 Vdc (Min) 2N6274POWER TRANSISTORSVCEO(sus) = 120 Vdc

 0.5. Size:96K  motorola
2n6237 2n6238 2n6239 2n6240 2n6241.pdf

2N62
2N62

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6237/D2N6237thruSilicon Controlled Rectifiers2N6241Reverse Blocking Triode Thyristors. . . PNPN devices designed for high volume consumer applications such asSCRstemperature, light, and speed control; process and remote control, and warning4 AMPERES RMSsystems where reliability of operation is important.50 t

 0.6. Size:702K  st
std2n62k3 stf2n62k3 stu2n62k3.pdf

2N62
2N62

STD2N62K3, STF2N62K3, STU2N62K3DatasheetN-channel 620 V, 2.9 typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2N62K3 DPAKSTF2N62K3 620 V 3.6 2.2 A TO-220FPSTU2N62K3 IPAKD(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitanceG(1) Improved

 0.7. Size:1255K  st
stb2n62k3.pdf

2N62
2N62

STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in DPAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max ID PTOT32311STB2N62K3TAB45 WIPAKDPAKSTD2N62K33TABSTF2N62K3 620 V

 0.8. Size:1255K  st
stb2n62k3 std2n62k3 stf2n62k3 stp2n62k3 stu2n62k3.pdf

2N62
2N62

STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in DPAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max ID PTOT32311STB2N62K3TAB45 WIPAKDPAKSTD2N62K33TABSTF2N62K3 620 V

 0.9. Size:1117K  st
std2n62k3 stf2n62k3 stu2n62k3 stp2n62k3.pdf

2N62
2N62

STD2N62K3, STF2N62K3STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A, DPAK, IPAK, TO-220, TO-220FPSuperMESH3 Power MOSFETFeaturesRDS(on) 3Type VDSS ID Pwmax1 32DPAK 1STD2N62K3 45 WIPAKSTF2N62K3 20 W620 V

 0.10. Size:49K  st
2n6284 2n6287.pdf

2N62
2N62

2N62842N6287COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The 2N6284 is a silicon epitaxial-base NPNTO-3power transistor in monolithic Darlingtonconfiguration moun

 0.11. Size:66K  central
2n6294 2n6295 2n6296 2n6297.pdf

2N62

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

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2n6249 2n6250 2n6251.pdf

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2N62

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 0.13. Size:70K  central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf

2N62

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.14. Size:135K  onsemi
2n6284g 2n6284g 2n6287g.pdf

2N62
2N62

2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1

 0.15. Size:241K  onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf

2N62
2N62

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 0.16. Size:241K  onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf

2N62
2N62

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 0.17. Size:593K  onsemi
2n6288g.pdf

2N62
2N62

PNP - 2N6107, 2N6109,2N6111; NPN - 2N6288,2N6292Complementary SiliconPlastic Power Transistorshttp://onsemi.comThese devices are designed for use in general-purpose amplifier andswitching applications.7 AMPEREFeaturesPOWER TRANSISTORS DC Current Gain Specified to 7.0 AmpereshFE = 30-150 @ ICCOMPLEMENTARY SILICON= 3.0 Adc - 2N6111, 2N628830 - 50 - 70 VOLTS, 40 WA

 0.18. Size:102K  onsemi
2n6292g.pdf

2N62
2N62

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 0.19. Size:135K  onsemi
2n6287g.pdf

2N62
2N62

2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1

 0.20. Size:102K  onsemi
2n6111g 2n6111g 2n6292g.pdf

2N62
2N62

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 0.21. Size:135K  onsemi
2n6286g.pdf

2N62
2N62

2N6284 (NPN); 2N6286,2N6287 (PNP)Preferred Device Darlington ComplementarySilicon Power TransistorsThese packages are designed for general-purpose amplifier andlow-frequency switching applications.http://onsemi.comFeatures20 AMPERE High DC Current Gain @ IC = 10 Adc -COMPLEMENTARY SILICONhFE = 2400 (Typ) - 2N6284POWER TRANSISTORS= 4000 (Typ) - 2N6287100 VOLTS, 1

 0.22. Size:382K  comset
2n6249-2n6250-2n6251.pdf

2N62
2N62

2N6249 2N6250 2N6251HIGH VOLTAGE NPN SILICON POWER TRANSISTORSHIGH VOLTAGE NPN SILICON POWER TRANSISTORSThe 2N6249 2N6250 2N6251 are NPN silicon transistors in Jedec TO-3.They are designed for high voltage inverters, switching regulators and line operated amplifierapplications. Especially well suited for switching power supply applications. High Voltage Breakdown

 0.23. Size:202K  comset
2n6253-2n6254-2n6371.pdf

2N62
2N62

2N6253 - 2N6254 - 2N6371HIGH POWER SILICON NPN TRANSISTORSThe 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a widevariety of high-power applications. The construction of these devices renders themhighly resistant to second breakdown over a wide range of operating conditions.These devices differ in maximum ratings for voltage and power dissipation. All aresuppli

 0.24. Size:142K  mospec
2n6211-13.pdf

2N62
2N62

AAA

 0.25. Size:211K  mospec
2n6282-87.pdf

2N62
2N62

AAAA

 0.26. Size:111K  mospec
2n6259.pdf

2N62
2N62

AAA

 0.27. Size:177K  mospec
2n6298-99 2n6300-01.pdf

2N62
2N62

AAAA

 0.28. Size:359K  no
2n6248 2n6469.pdf

2N62
2N62

 0.29. Size:11K  semelab
2n6247.pdf

2N62

2N6247Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 90V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.30. Size:12K  semelab
2n6254.pdf

2N62

2N6254Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.31. Size:10K  semelab
2n6245.pdf

2N62

2N6245Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 330V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.32. Size:11K  semelab
2n6246.pdf

2N62

2N6246Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 70V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.33. Size:11K  semelab
2n6230.pdf

2N62

2N6230Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.34. Size:11K  semelab
2n6262.pdf

2N62

2N6262Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 150V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.35. Size:10K  semelab
2n6235x.pdf

2N62

2N6235XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec

 0.36. Size:11K  semelab
2n6226.pdf

2N62

2N6226Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.37. Size:11K  semelab
2n6263.pdf

2N62

2N6263Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 120V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.38. Size:25K  semelab
2n6299smd05 2n6299smd 2n6301smd 2n6301smd05.pdf

2N62
2N62

2N6299SMD 2N6299SMD052N6301SMD 2N6301SMD05MECHANICAL DATADimensions in mm (inches) COMPLEMENTARY SILICON POWER TRANSISTORS 2N6299SMD - PNP TRANSISTOR2N6301SMD - NPN TRANSISTOR Designed for general

 0.39. Size:18K  semelab
2n6261.pdf

2N62
2N62

2N6261MECHANICAL DATAHOMETAXIAL-BASEDimensions in mm(inches)MEDIUM POWER SILICONNPN TRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.FEATURES fT = 800 kHz at 0.2A Maximum Safe-area of operation curvesfor dc and pulse operation. VCEV(sus) = 90V min Low Saturation Voltage:VCE(sat = 1.0V at IC = 0.5A)1.27 (0.050

 0.40. Size:11K  semelab
2n6235.pdf

2N62

2N6235Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 325V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.41. Size:11K  semelab
2n6234.pdf

2N62

2N6234Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.42. Size:11K  semelab
2n6253.pdf

2N62

2N6253Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 45V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.43. Size:11K  semelab
2n6260.pdf

2N62

2N6260Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 40V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

 0.44. Size:12K  semelab
2n6270.pdf

2N62

2N6270Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.45. Size:11K  semelab
2n6227.pdf

2N62

2N6227Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 0.46. Size:11K  semelab
2n6264.pdf

2N62

2N6264Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 150V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.47. Size:11K  semelab
2n6271.pdf

2N62

2N6271Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.48. Size:127K  isahaya
rt2n62m.pdf

2N62
2N62

 0.49. Size:94K  acrian
2n6200 b40-28.pdf

2N62
2N62

 0.50. Size:101K  bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf

2N62
2N62

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

 0.51. Size:95K  cdil
2n6107 2n6292.pdf

2N62
2N62

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS 2N6107 PNP2N6292 NPNTO-220Plastic PackageGeneral Purpose Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VCollector Emitter Voltage VCEO 70 VCollector Emitter Voltage (RBE= 100

 0.52. Size:288K  cdil
2n6290.pdf

2N62
2N62

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N62902N6290 NPN PLASTIC POWER TRANSISTORComplementary 2N6109Medium Power Switching and Linear ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.40

 0.53. Size:181K  cdil
2n6288.pdf

2N62
2N62

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N62882N6288 NPN PLASTIC POWER TRANSISTORComplementary 2N6111General Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.1

 0.54. Size:99K  jmnic
2n6254.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3)

 0.55. Size:107K  jmnic
2n6226 2n6227 2n6228.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6226 2N6227 2N6228 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio;stepping motor and other linear applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolut

 0.56. Size:83K  jmnic
2n6258.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6258 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAME

 0.57. Size:134K  jmnic
2n6261.pdf

2N62
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6261 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits Series and shunt-regulator driver and output stages High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.

 0.58. Size:122K  jmnic
2n6249 2n6250 2n6251.pdf

2N62
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage Low saturation voltage Fast switching capability APPLICATIONS For high voltage inverters ,switching regulators and line operated amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 0.59. Size:98K  jmnic
2n6216 2n6217.pdf

2N62
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI

 0.60. Size:121K  jmnic
2n6294 2n6295.pdf

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute maximum rating

 0.61. Size:94K  jmnic
2n6257.pdf

2N62
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6257 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maxim

 0.62. Size:122K  jmnic
2n6298 2n6299.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outlin

 0.63. Size:51K  jmnic
2n6296 2n6297.pdf

2N62
2N62

Product Specification www.jmnic.comSilicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute maximum ratings

 0.64. Size:122K  jmnic
2n6246 2n6247 2n6248.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6246 2N6247 2N6248 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou

 0.65. Size:110K  jmnic
2n6229 2n6230 2n6231.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol

 0.66. Size:100K  jmnic
2n6253.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6253 DESCRIPTION With TO-3 package Low saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3)

 0.67. Size:119K  jmnic
2n6291 2n6293.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION1 Base C

 0.68. Size:147K  jmnic
2n6260.pdf

2N62
2N62

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6260 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits High-fidelity amplifers Solenoid drivers Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.

 0.69. Size:83K  jmnic
2n6259.pdf

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6259 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipation APPLICATIONS Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and DC-DC converters or inverters PINNING PIN DESCRIPTION1 Base 2 Emitter3 Colle

 0.70. Size:64K  microsemi
2n6274 2n6277.pdf

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TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 Devices Qualified Level JAN 2N6274 2N6277 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6274 2N6277 Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 120 180 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Base Current I 20 Adc B Collector Current 50 Adc IC 250 W T

 0.71. Size:179K  microsemi
2n6250t1.pdf

2N62
2N62

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN2N6249T1 2N6250T1 2N6251T1 JANTXJA

 0.72. Size:139K  microsemi
2n6232.pdf

2N62
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TECHNICAL DATASILICON NPN TRANSISTOR Devices 10 AMP 2N6232 100 V FAST SWITCHING LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Symbol Value UnitsCollector-Emitter Voltage 100 VdcVCEO Collector-Base Voltage 140 VdcVCBO Emitter-Base Voltage 7.0 VdcVEBO Collector Current Peak (1) 10 AdcIC Base Current Continuous IB AdcTotal Power Dissipation @

 0.73. Size:179K  microsemi
2n6251t1.pdf

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN2N6249T1 2N6250T1 2N6251T1 JANTXJA

 0.74. Size:231K  microsemi
2n6255.pdf

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140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-98552N6255RF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50%1. Emitter2. Base3. CollectorTO-39DESCRIPTION:Silicon NPN transistor, designed for 12.5

 0.75. Size:179K  microsemi
2n6249t1 2n6249t1 2n6250t1.pdf

2N62
2N62

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6250 2N6251 JAN2N6249T1 2N6250T1 2N6251T1 JANTXJA

 0.76. Size:176K  aeroflex
2n6249 2n6250 2n6251.pdf

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NPN High Power Silicon Transistors2N6249, 2N6250, 2N6251Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6249 2N6250 2N6251 UnitsCollector - Emitter Voltage VCEO 200 275 350 VdcCollector - Base Voltage VCBO300 375 450 VdcEmitter - Base Voltage VEBO 6.0 VdcCollector Current IC 10 AdcBase Curr

 0.77. Size:185K  aeroflex
2n6298 2n6299.pdf

2N62
2N62

PNP Darlington Power Silicon Transistor2N6298 & 2N6299Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N6298 2N6299 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 60 80 VdcEmitter - Base Voltage VEBO 5.0 VdcBase Current IB 120 mAdcCollector Current IC 8.0 AdcTot

 0.78. Size:174K  aeroflex
2n6286 2n6287.pdf

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PNP Darlington Power Silicon Transistor2N6286 & 2N6287Features Available in JANTX, and JANTXV per MIL-PRF-19500/505 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6286 2N6287 UnitsCollector - Emitter Voltage VCEO -80 -100 VdcCollector - Base Voltage VCBO -80 -100 VdcEmitter - Base Voltage VEBO -7.0 VdcBase Current IB -0.5 AdcCollector Current IC -20 Adc(1

 0.79. Size:116K  inchange semiconductor
2n6254.pdf

2N62
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6254 DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline

 0.80. Size:189K  inchange semiconductor
2n6290.pdf

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isc Silicon NPN Power Transistor 2N6290DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)Complement to Type 2N6109Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RA

 0.81. Size:116K  inchange semiconductor
2n6262.pdf

2N62
2N62

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maxi

 0.82. Size:195K  inchange semiconductor
2n6287.pdf

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INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2N6287DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -10 AdcFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Complement to type 2N6284Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntende

 0.83. Size:117K  inchange semiconductor
2n6226 2n6227 2n6228.pdf

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6226 2N6227 2N6228 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio;stepping motor and other linear applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector

 0.84. Size:218K  inchange semiconductor
2n6276.pdf

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isc Silicon NPN Power Transistor 2N6276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =140V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 14

 0.85. Size:116K  inchange semiconductor
2n6258.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6258 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAM

 0.86. Size:195K  inchange semiconductor
2n6292.pdf

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isc Product Specificationisc Silicon NPN Power Transistor 2N6292DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)Complement to Type 2N6107APPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

 0.87. Size:118K  inchange semiconductor
2n6285 2n6286 2n6287.pdf

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 DESCRIPTION With TO-3 package Complement to type 2N6282/6283/6284 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and

 0.88. Size:125K  inchange semiconductor
2n6261.pdf

2N62
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6261 DESCRIPTION With TO-66 package Low collector saturation voltage Wide safe operating area APPLICATIONS Power switching circuits Series and shunt-regulator driver and output stages High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter

 0.89. Size:188K  inchange semiconductor
2n6289.pdf

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isc Silicon NPN Power Transistor 2N6289DESCRIPTIONDC Current Gain-: h = 30-150@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.90. Size:195K  inchange semiconductor
2n6211.pdf

2N62
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6211DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -225V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchi

 0.91. Size:219K  inchange semiconductor
2n6274.pdf

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isc Silicon NPN Power Transistor 2N6274DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 10

 0.92. Size:119K  inchange semiconductor
2n6249 2n6250 2n6251.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage,high speed Low collector saturation voltage APPLICATIONS High voltage inverters Switching regulators Line operated amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified out

 0.93. Size:189K  inchange semiconductor
2n6293.pdf

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isc Silicon NPN Power Transistor 2N6293DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.94. Size:122K  inchange semiconductor
2n6288 2n6290 2n6292.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYM

 0.95. Size:116K  inchange semiconductor
2n6216 2n6217.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE

 0.96. Size:227K  inchange semiconductor
2n6278.pdf

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isc Silicon NPN Power Transistor 2N6278DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 10

 0.97. Size:118K  inchange semiconductor
2n6282 2n6283 2n6284.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6282 2N6283 2N6284 DESCRIPTION With TO-3 package Complement to type 2N6285/6286/6287 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and

 0.98. Size:171K  inchange semiconductor
2n6294 2n6295.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6296/6297 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximu

 0.99. Size:184K  inchange semiconductor
2n6217.pdf

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isc Silicon NPN Power Transistor 2N6217DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.100. Size:116K  inchange semiconductor
2n6257.pdf

2N62
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6257 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maxi

 0.101. Size:209K  inchange semiconductor
2n6284.pdf

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isc Silicon NPN Darlingtion Power Transistor 2N6284DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I =10 AdcFE CCollector-Emitter Sustaining Voltage-V =100V(Min)CEO(SUS)Complement to type 2N6287Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amplif

 0.102. Size:227K  inchange semiconductor
2n6280.pdf

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isc Silicon NPN Power Transistor 2N6280DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =140V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 14

 0.103. Size:187K  inchange semiconductor
2n6235.pdf

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isc Silicon NPN Power Transistor 2N6235DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min)CEO(SUS)DC Current Gain-: h = 25-125@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V )= 0.5V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f for high-voltage medium pow

 0.104. Size:128K  inchange semiconductor
2n6263 2n6264.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6263 2N6264 DESCRIPTION With TO-66 package High breakdown voltage Low collector saturation voltage APPLICATIONS A wide variety of medium-to-high power, high-voltage applications Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNI

 0.105. Size:131K  inchange semiconductor
2n6298 2n6299.pdf

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6300/6301 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

 0.106. Size:247K  inchange semiconductor
2n6277.pdf

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6277 DESCRIPTION High Switching Speed High DC Current Gain- : hFE= 30-120@ IC= 20A Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A Complement to Type 2N6379 APPLICATIONSDesigned for use in industrial-military power amplifier and switching circuit applications.

 0.107. Size:184K  inchange semiconductor
2n6216.pdf

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isc Silicon NPN Power Transistor 2N6216DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.108. Size:173K  inchange semiconductor
2n6296 2n6297.pdf

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION With TO-66 package DARLINGTON Complement to type 2N6294/6295 APPLICATIONS For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximu

 0.109. Size:223K  inchange semiconductor
2n6282.pdf

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isc Silicon NPN Darlingtion Power Transistor 2N6282DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = 10 AdcFE CCollector-Emitter Sustaining Voltage-V = 60V(Min)CEO(SUS)Complement to type 2N6285APPLICATIONSIntended for general purpose amplifier and low frequencyswitching applications, such as linear and switching indu-str

 0.110. Size:194K  inchange semiconductor
2n6286.pdf

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isc Silicon PNP Darlingtion Power Transistor 2N6286DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I = -10 AdcFE CCollector-Emitter Sustaining Voltage-V = -80V(Min)CEO(SUS)Complement to type 2N6283Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amp

 0.111. Size:118K  inchange semiconductor
2n6246 2n6247 2n6248.pdf

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6246 2N6247 2N6248 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin

 0.112. Size:219K  inchange semiconductor
2n6275.pdf

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isc Silicon NPN Power Transistor 2N6275DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =120V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 140 VCBOV Collector-Emitter Voltage 12

 0.113. Size:117K  inchange semiconductor
2n6229 2n6230 2n6231.pdf

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3

 0.114. Size:200K  inchange semiconductor
2n6283.pdf

2N62
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isc Silicon NPN Darlingtion Power Transistor 2N6283DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 750 (Min) @ I =10 AdcFE CCollector-Emitter Sustaining Voltage-V =80V(Min)CEO(SUS)Complement to type 2N6286Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for general purpose amplifi

 0.115. Size:116K  inchange semiconductor
2n6253.pdf

2N62
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6253 DESCRIPTION With TO-3 package Low collector saturation voltage Wide safe operating area High dissipation capability APPLICATIONS Series and shunt regulators High fidelity amplifiers Power switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline

 0.116. Size:120K  inchange semiconductor
2n6291 2n6293.pdf

2N62
2N62

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION With TO-220 package Low collector saturation voltage Wide safe operating area APPLICATIONS For medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION1

 0.117. Size:187K  inchange semiconductor
2n6212.pdf

2N62
2N62

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6212DESCRIPTIONWith TO-3 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitionAlternator regulatorMotor controlsABSOLUTE MA

 0.118. Size:188K  inchange semiconductor
2n6291.pdf

2N62
2N62

isc Silicon NPN Power Transistor 2N6291DESCRIPTIONDC Current Gain-: h = 30-150@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 0.119. Size:125K  inchange semiconductor
2n6260.pdf

2N62
2N62

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6260 DESCRIPTION With TO-66 package Low saturation voltage Wide safe operating area APPLICATIONS Power switching circuits High-fidelity amplifers Solenoid drivers Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si

 0.120. Size:116K  inchange semiconductor
2n6270 2n6271.pdf

2N62
2N62

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6270 2N6271 DESCRIPTION With TO-3 package High current capability Wide safe operating area APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum rat

 0.121. Size:174K  inchange semiconductor
2n6259.pdf

2N62
2N62

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6259 DESCRIPTION DC Current Gain- : hFE= 15-60@IC= 8A High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(T

 0.122. Size:176K  inchange semiconductor
2n6251.pdf

2N62
2N62

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6251 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High Power Dissipation APPLICATIONS Designed for high voltage, high current ,high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V

 0.123. Size:189K  inchange semiconductor
2n6213.pdf

2N62
2N62

isc Silicon PNP Power Transistor 2N6213DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchingregulators, converte

 0.124. Size:227K  inchange semiconductor
2n6281.pdf

2N62
2N62

isc Silicon NPN Power Transistor 2N6281DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =150V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 180 VCBOV Collector-Emitter Voltage 15

Другие транзисторы... 2N6195 , 2N6196 , 2N6197 , 2N6198 , 2N6199 , 2N61A , 2N61B , 2N61C , S9013 , 2N620 , 2N6200 , 2N6201 , 2N6202 , 2N6203 , 2N6204 , 2N6205 , 2N6206 .

 

 
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