Биполярный транзистор 2N6219 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6219
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO92
2N6219 Datasheet (PDF)
2n6216 2n6217.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI
2n6211.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6211DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -225V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchi
2n6216 2n6217.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6216 2N6217 DESCRIPTION With TO-3 package High current ,high power dissipation APPLICATIONS For use in switching and linear power applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
2n6217.pdf
isc Silicon NPN Power Transistor 2N6217DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2n6216.pdf
isc Silicon NPN Power Transistor 2N6216DESCRIPTIONWith TO-3 packageExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for linear power and switchingamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2n6212.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6212DESCRIPTIONWith TO-3 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitionAlternator regulatorMotor controlsABSOLUTE MA
2n6213.pdf
isc Silicon PNP Power Transistor 2N6213DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifierapplication for high-voltage operational amplifier, switchingregulators, converte
Другие транзисторы... 2N6211 , 2N6212 , 2N6213 , 2N6214 , 2N6215 , 2N6216 , 2N6217 , 2N6218 , 2SD2012 , 2N622 , 2N6220 , 2N6221 , 2N6222 , 2N6223 , 2N6224 , 2N6225 , 2N6226 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050