TIP33CF - описание и поиск аналогов

TIP33C TIP34C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagrams Table 1.

TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3 The TIP33C is a silicon Epitaxial-Base NPN 2 power transistor mounted in TO-218 plastic 1 package. It is intented for use in linear and switching applications. TO-218 The complementary PNP t

TIP33A, TIP33C NPN High-Power Transistors Designed for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in 10 AMPERE Pb-Free Packages are Available* NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol

DATA SHEET www.onsemi.com NPN High-Power Transistors TIP33C Designed for general-purpose power amplifier and switching applications. TO-247 CASE 340L Features STYLE 3 ESD Ratings Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 10 AMPERE Epoxy Meets UL 94 V-0 @ 0.125 in NPN SILICON These Devices is Pb-Free* POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM R

SEMICONDUCTOR TIP33C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to TIP34C. Recommended for 45W 50W Audio Frequency DIM MILLIMETERS A 15.9 MAX Amplifier Output Stage. B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d MAXIMUM RATING (Ta=25 ) H 9.0 I 4.5 CHARACTERISTIC SY

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

isc Silicon NPN Power Transistor TIP33C DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP34C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXI