2SC3218M. Аналоги и основные параметры
Наименование производителя: 2SC3218M
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 160 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1000 MHz
Статический коэффициент передачи тока (hFE): 20
Аналоги (замена) для 2SC3218M
- подборⓘ биполярного транзистора по параметрам
2SC3218M даташит
8.3. Size:156K jmnic
2sc3212.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3212
8.4. Size:147K jmnic
2sc3214.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA
8.5. Size:152K jmnic
2sc3210.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION With TO-3PFa package Low collector saturation voltage High breakdown voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage
8.6. Size:197K inchange semiconductor
2sc3211.pdf 
isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
8.7. Size:197K inchange semiconductor
2sc3212.pdf 
isc Silicon NPN Power Transistor 2SC3212 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
8.8. Size:82K inchange semiconductor
2sc3211a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION With TO-3PFa package High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector
8.9. Size:188K inchange semiconductor
2sc3214.pdf 
isc Silicon NPN Power Transistor 2SC3214 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Large safe operating area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators,Motor controls,Ultrasonic Oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.10. Size:197K inchange semiconductor
2sc3210.pdf 
isc Silicon NPN Power Transistor 2SC3210 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
8.11. Size:124K inchange semiconductor
2sc3212 2sc3212a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA
Другие транзисторы: 2SC1741AS, 2SC3359S, 2SC2058S, 2SC2501, 2SC2585, 2SC2750, 2SC2824, 2SC3198L, BC548, 2SC3271F, 2SC3802K, 2SC3839K, 2SC4115S, 2SC4184, 2SC4225, 2SC4227, 2SC4228
