2SC3218M Datasheet and Replacement
Type Designator: 2SC3218M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 160
W
Maximum Collector-Base Voltage |Vcb|: 55
V
Maximum Collector-Emitter Voltage |Vce|: 32
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 1000
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
-
BJT ⓘ Cross-Reference Search
2SC3218M Datasheet (PDF)
8.3. Size:156K jmnic
2sc3212.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC3212
8.4. Size:147K jmnic
2sc3214.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
8.5. Size:152K jmnic
2sc3210.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION With TO-3PFa package Low collector saturation voltage High breakdown voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
8.6. Size:197K inchange semiconductor
2sc3211.pdf
isc Silicon NPN Power Transistor 2SC3211DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
8.7. Size:197K inchange semiconductor
2sc3212.pdf
isc Silicon NPN Power Transistor 2SC3212DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
8.8. Size:82K inchange semiconductor
2sc3211a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION With TO-3PFa package High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector
8.9. Size:188K inchange semiconductor
2sc3214.pdf
isc Silicon NPN Power Transistor 2SC3214DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedLarge safe operating areaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators,Motor controls,UltrasonicOscillators.ABSOLUTE MAXIMUM RATINGS(T =25)a
8.10. Size:197K inchange semiconductor
2sc3210.pdf
isc Silicon NPN Power Transistor 2SC3210DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
8.11. Size:124K inchange semiconductor
2sc3212 2sc3212a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
Datasheet: 2SC1741AS
, 2SC3359S
, 2SC2058S
, 2SC2501
, 2SC2585
, 2SC2750
, 2SC2824
, 2SC3198L
, 2N3904
, 2SC3271F
, 2SC3802K
, 2SC3839K
, 2SC4115S
, 2SC4184
, 2SC4225
, 2SC4227
, 2SC4228
.
Keywords - 2SC3218M transistor datasheet
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