2SC3839K. Аналоги и основные параметры
Наименование производителя: 2SC3839K
Маркировка: AEN
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 900 MHz
Ёмкость коллекторного перехода (Cc): 0.8 pf
Статический коэффициент передачи тока (hFE): 27
Корпус транзистора: SMT SC-59
Аналоги (замена) для 2SC3839K
- подборⓘ биполярного транзистора по параметрам
2SC3839K даташит
2sc3839k.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc3838.pdf
2SC5662 / 2SC4726 / 2SC4083 / Transistors 2SC3838K / 2SC4043S High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S External dimensions (Units mm) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2SC5662 1.2 0.2 0.8 0.2 2) Small rbb Cc and high gain. (Typ. 4ps) (2) 3) Small NF. (3) (1) (1) Base 0.15Max. (2) E
2sc4725 2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc3838k.pdf
2SC3838K Datasheet High-Frequency Amplifer Transistor (11V, 50mA, 3.2GHz) lOutline l SOT-346 Parameter Value SC-59 VCEO 11V IC 50mA SMT3 lFeatures lInner circuit l l 1)High transition frequency.(Typ. fT=3.2GHz) 2)Small rbb' Cc and high gain.(Typ.4ps) 3)Small NF. lApplication l UHF FR
2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM VMT3 Packaging specifications and
2sc3837k.pdf
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units mm) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 1.2 0.2 0.8 0.2 2) Small rbb Cc and high gain. (Typ. 6ps) (2) (3) 3) Small NF. (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter (3
2sc3835.pdf
UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8 V Base Current IB 3 A Collector Current 7 A
2sc3838.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3838 NPN SILICON TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 3 FEATURES 1 2 *High transition frequency. *Small rbb Cc and high gain. SOT-23 *Small NF. 3 1 2 SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3838L-x-AE3-R 2SC3838G-x-AE3-R SOT-23 E B C Tape Reel 2SC3
2sc3834.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220
2sc3836.pdf
2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3836 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 300 mW Ju
2sc3835.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO
2sc3834.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO
2sc3832.pdf
2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions 2SC3832 Unit Symbol 2SC3832 Unit 0.2 4.8 0.2 10.2 0.1 ICBO VCBO 500 V VCB=500V 100max A 2.
2sc3831.pdf
2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 600 V VCB=600V 1max mA ICBO
2sc3833.pdf
2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V VCB=500V 100max A
2sc3830.pdf
2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC3830 Unit Symbol Conditions 2SC3830 Unit 0.2 4.8 0.2 10.2 0.1 VCBO 600 V ICBO VCB=600V 1max 2.0 mA VC
2sc3835.pdf
2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Unit Symbol Conditions Ratings 0.2 4.8 0.4 15.6 VCBO 200 VCB=200V 100max A 0.1 V ICBO 9.6 2.0 VCEO 120 IEBO
2sc3834.pdf
2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol Symbol 2SC3834 Unit Conditions 2SC3834 Unit 0.2 4.8 0.2 10.2 0.1 2.0 ICBO VCBO 200 V VCB=200V 100max A IEBO 100max A
2sc3838.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3838 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 11 Vdc C
2sc3838.pdf
2SC3838 COLLECTOR High-Frequency Amplifier Transistor 3 3 NPN Silicon 1 1 P b Lead(Pb)-Free 2 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit V Collector-Emitter Voltage CEO 11 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC mA Collector Current-Continuous 50 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit T
2sc383tm.pdf
2SC383TM(BR3DG383TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features G =33dB( )(f=45MHz),h pe FE High gain Gpe=33dB(Typ)(f=45MHz),good linearity of hFE.. / Applications TV final picture IF
2sc3834f.pdf
2SC3834F(BR3DA3834F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features / Applications - Humidifier, DC-DC converter, and general purpose. / Equivalent Circuit /
l2sc3838qlt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838QLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838QLT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE
l2sc3838lt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-
s-l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc3838lt1g l2sc3838lt3g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-
l2sc3837lt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837LT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837LT1G 2.Small rbb Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-
l2sc3837qlt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837QLT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837QLT1G 2.Small rbb Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE
l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc3838nlt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838NLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) 3 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 20 V CBO
2sc3838.pdf
SMD Type Transistors NPN Transistors 2SC3838 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High transition frequency. Small rbb Cc and high gain. Small NF. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Coll
2sc3834f 3da3834f.pdf
2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 )
2sc3834 3da3834.pdf
2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 ) 50
gst2sc3838.pdf
GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 11V amplifier and switch. Collector Current 50mA Lead(Pb)-Free Packages & Pin Assignments GST2SC3838F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST
2sc3834t1tl.pdf
2SC3834T1TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
2sc3835t4tl.pdf
2SC3835T4TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
2sc3832.pdf
isc Silicon NPN Power Transistor 2SC3832 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT
2sc3831.pdf
isc Silicon NPN Power Transistor 2SC3831 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT
2sc3833.pdf
isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3830.pdf
isc Silicon NPN Power Transistor 2SC3830 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE
2sc3835.pdf
isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose appl
2sc3835g.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS
2sc3838.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3838 DESCRIPTION Low Noise NF = 3.5 dB TYP. @V = 6 V, I = 2 mA, f = 500 MHz CE C High Current-Gain Bandwidth Product f = 3.2 GHz TYP. @V = 10 V, I = 10 mA, f = 500 MHz T CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-n
2sc3834.pdf
isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose appl
Другие транзисторы: 2SC2501, 2SC2585, 2SC2750, 2SC2824, 2SC3198L, 2SC3218M, 2SC3271F, 2SC3802K, BC337, 2SC4115S, 2SC4184, 2SC4225, 2SC4227, 2SC4228, 2SC4411, 2SC4457, 2SC4459
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