2SC3839K Specs and Replacement
Type Designator: 2SC3839K
SMD Transistor Code: AEN
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 900 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 27
Package: SMT SC-59
2SC3839K Substitution
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2SC3839K datasheet
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
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High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package... See More ⇒
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High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package... See More ⇒
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2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions 2SC3832 Unit Symbol 2SC3832 Unit 0.2 4.8 0.2 10.2 0.1 ICBO VCBO 500 V VCB=500V 100max A 2.... See More ⇒
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Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3838 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 11 Vdc C... See More ⇒
2SC3838 COLLECTOR High-Frequency Amplifier Transistor 3 3 NPN Silicon 1 1 P b Lead(Pb)-Free 2 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit V Collector-Emitter Voltage CEO 11 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC mA Collector Current-Continuous 50 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit T... See More ⇒
2SC383TM(BR3DG383TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features G =33dB( )(f=45MHz),h pe FE High gain Gpe=33dB(Typ)(f=45MHz),good linearity of hFE.. / Applications TV final picture IF ... See More ⇒
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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838QLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838QLT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 ... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837LT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837LT1G 2.Small rbb Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837QLT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837QLT1G 2.Small rbb Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 ... See More ⇒
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838NLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) 3 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 20 V CBO ... See More ⇒
SMD Type Transistors NPN Transistors 2SC3838 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High transition frequency. Small rbb Cc and high gain. Small NF. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Coll... See More ⇒
2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 ) ... See More ⇒
2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 ) 50... See More ⇒
GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 11V amplifier and switch. Collector Current 50mA Lead(Pb)-Free Packages & Pin Assignments GST2SC3838F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST... See More ⇒
2SC3834T1TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec... See More ⇒
2SC3835T4TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec... See More ⇒
isc Silicon NPN Power Transistor 2SC3832 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT... See More ⇒
isc Silicon NPN Power Transistor 2SC3831 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT... See More ⇒
isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
isc Silicon NPN Power Transistor 2SC3830 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE... See More ⇒
isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose appl... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3838 DESCRIPTION Low Noise NF = 3.5 dB TYP. @V = 6 V, I = 2 mA, f = 500 MHz CE C High Current-Gain Bandwidth Product f = 3.2 GHz TYP. @V = 10 V, I = 10 mA, f = 500 MHz T CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-n... See More ⇒
isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose appl... See More ⇒
Detailed specifications: 2SC2501, 2SC2585, 2SC2750, 2SC2824, 2SC3198L, 2SC3218M, 2SC3271F, 2SC3802K, BC337, 2SC4115S, 2SC4184, 2SC4225, 2SC4227, 2SC4228, 2SC4411, 2SC4457, 2SC4459
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History: MMBT5551LT1 | 2SC3198L | BCY71DCSM | BCY70DCSM | 2SC929 | 2SC3645 | 2SC3218M
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