2SC4225 - Даташиты. Аналоги. Основные параметры

DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band. 2.1 0.1 It has large dynamic range and good current characteristics. 1.25 0.1 FEATURES 2 Low Noise

Ordering number EN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4220] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

Ordering number EN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4222] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

Ordering number EN2816B NPN Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4221] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

Ordering number EN2763A NPN Triple Diffused Planar Silicon Transistor 2SC4224 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4224] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4

Ordering number EN2762A NPN Triple Diffused Planar Silicon Transistor 2SC4223 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4223] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied small

DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. It is suitable for a high density surface mount assembly since the 2.1 0.1 transistor has been applied super mini mold pa

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L 3 Power dissipation.(PC=150mW) 3 Top View C B 1 1 2 2 K E APPLICATIONS High frequency low noise amplifier. D H J F G CLASSIFICATION OF hFE Pro

LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix

SMD Type Transistors NPN Transistors 2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

2SC4228 NPN 2SC4228 NPN SOT-323 VHF UHF S21e 2 5.5 dB @ VCE=3V IC=5mA f=2GHz

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO

2SC4226 NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption of noise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable for high density surface patch installation, mainly for installation, mainly for the VHF, UHF low noise ampli

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4226 DESCRIPTION Low Collector Curren -I = 0.1A C Low Collector Power Pc=0.1W With SOT-323 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

isc Silicon NPN RF Transistor 2SC4227 DESCRIPTION Low Noise NF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHz CE C High Gain S 2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz 21e CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4228 DESCRIPTION High f T 8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C Low C re 0.3pF TYP., @V = 3 V, I = 0, f = 1 MHz CB E High S 2 21e 7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f