2SC4225 Datasheet, Equivalent, Cross Reference Search

DATA SHEETSILICON TRANSISTOR2SC4225MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4225 is an NPN silicon epitaxial transistor designed for lowin millimetersnoise amplifier at VHF through UHF band.2.1 0.1It has large dynamic range and good current characteristics.1.25 0.1FEATURES2 Low Noise

Ordering number:EN2825ANPN Triple Diffused Planar Silicon Transistor2SC4220400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4220] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

Ordering number:EN2761ANPN Triple Diffused Planar Silicon Transistor2SC4222500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4222] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

Ordering number:EN2816BNPN Triple Diffused Planar Silicon Transistor2SC4221500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4221] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

Ordering number:EN2763ANPN Triple Diffused Planar Silicon Transistor2SC4224800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4224] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.4

Ordering number:EN2762ANPN Triple Diffused Planar Silicon Transistor2SC4223800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2049C Wide ASO.[2SC4223] Adoption of MBIT process.10.24.51.3 Suitable for sets whose height is restricted.1.20.80.

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

DATA SHEETNPN SILICON RF TRANSISTOR2SC4226NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

DATA SHEETSILICON TRANSISTOR2SC4227HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF,in millimetersUHF low noise amplifier.2.1 0.1It is suitable for a high density surface mount assembly since the1.25 0.1transistor has been applied small

DATA SHEETSILICON TRANSISTOR2SC4228HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF,in millimeters UHF low noise amplifier.It is suitable for a high density surface mount assembly since the 2.1 0.1 transistor has been applied super mini mold pa

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L3 Power dissipation.(PC=150mW) 3Top View C B11 22K EAPPLICATIONS High frequency low noise amplifier. DH JF GCLASSIFICATION OF hFE Pro

LESHAN RADIO COMPANY, LTD.L2SC4226T1GS-L2SC4226T1G312SC-70/SOT-323DESCRIPTIONThe L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF lownoise amplifier.It is suitable for a high density surface mount assembly since the transistorhas been applied small mini mold package.We declare that the material of product compliance with RoHS requirements.S- Prefix

SMD Type TransistorsNPN Transistors2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

2SC4228NPN2SC4228 NPN SOT-323 VHFUHF :S21e2 5.5 dB @ VCE=3VIC=5mAf=2GHz

2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3

2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO

2SC4226NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption ofnoise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable forhigh density surface patch installation, mainly forinstallation, mainly for the VHF, UHF low noise ampli

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4226DESCRIPTIONLow Collector Curren -I = 0.1ACLow Collector PowerPc=0.1WWith SOT-323 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for broadband low noise amplifier ;wideband low noise amplifieABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN RF Transistor 2SC4227DESCRIPTIONLow NoiseNF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHzCE CHigh GainS 2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz21e CE C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF, UHF low noise amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4228DESCRIPTIONHigh fT8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHzCE CLow Cre0.3pF TYP., @V = 3 V, I = 0, f = 1 MHzCB EHigh S 221e7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHzCE C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f