2SC4596E - Даташиты. Аналоги. Основные параметры

2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 60 V Collector current (DC) I

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION Low Collector Saturation Voltage V = 0.3V(Max)@ I = 3A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Complement to Type 2SA1757 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high sp

Ordering number EN3144 NPN Triple Diffused Planar Silicon Transistor 2SC4598 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4598] cesses for 2SC4598-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Ordering number EN3145 NPN Triple Diffused Planar Silicon Transistor 2SC4599 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4599] cesses for 2SC4599-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

Ordering number EN3143 NPN Triple Diffused Planar Silicon Transistor 2SC4597 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4597] cesses for 2SC4597-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC

2SC4593 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4593 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction

2SC4591 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4591 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction

2SC4592 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4592 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC

SMD Type Transistors NPN Transistors 2SC4591 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4595 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 2V, I = 2A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 6A, I = 0.3A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4591 DESCRIPTION High Current-Gain Bandwidth Product f = 9.0GHz TYP. @V = 5 V, I = 20 mA T CE C Low Noise NF = 1.2 dB TYP. @V = 5 V, I = 5 mA, f = 900 MHz CE C High Power Gain PG = 12.5 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and