2SC4596E Datasheet and Replacement

2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 60 V Collector current (DC) I... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION Low Collector Saturation Voltage V = 0.3V(Max)@ I = 3A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Complement to Type 2SA1757 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high sp... See More ⇒

Ordering number EN3144 NPN Triple Diffused Planar Silicon Transistor 2SC4598 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4598] cesses for 2SC4598-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC... See More ⇒

Ordering number EN3145 NPN Triple Diffused Planar Silicon Transistor 2SC4599 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4599] cesses for 2SC4599-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC... See More ⇒

Ordering number EN3143 NPN Triple Diffused Planar Silicon Transistor 2SC4597 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4597] cesses for 2SC4597-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC... See More ⇒

2SC4593 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4593 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction... See More ⇒

2SC4591 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4591 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction ... See More ⇒

2SC4592 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4592 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC ... See More ⇒

SMD Type Transistors NPN Transistors 2SC4591 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4595 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 2V, I = 2A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 6A, I = 0.3A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... See More ⇒

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4591 DESCRIPTION High Current-Gain Bandwidth Product f = 9.0GHz TYP. @V = 5 V, I = 20 mA T CE C Low Noise NF = 1.2 dB TYP. @V = 5 V, I = 5 mA, f = 900 MHz CE C High Power Gain PG = 12.5 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and... See More ⇒