2SC4630LS datasheet, аналоги, основные параметры
Наименование производителя: 2SC4630LS 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 6 MHz
Ёмкость коллекторного перехода (Cc): 2.8 pf
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO-220FI
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Аналоги (замена) для 2SC4630LS
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2SC4630LS даташит
..1. Size:27K sanyo
2sc4630ls.pdf 
Ordering number ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit mm Small Cob(typical Cob=2.8pF). 2079D Full isolation package. [2SC4630LS] High reliability(Adoption of HVP process). 10.0 4.5
7.1. Size:95K sanyo
2sc4630.pdf 
Ordering number EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Cob (typical Cob=2.8pF). 2079B Full isolation package. [2SC4630] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.
8.1. Size:102K sanyo
2sc4636.pdf 
Ordering number EN3705A NPN Triple Diffused Planar Silicon Transistor 2SC4636 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit mm Small Cob (typical Cob=1.4pF). 2079B Full-isolation package. [2SC4636] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0
8.2. Size:105K sanyo
2sc4637.pdf 
Ordering number EN3706A NPN Triple Diffused Planar Silicon Transistor 2SC4637 1800V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit mm Small Cob (typical Cob=1.8pF). 2079B Full-isolation package. [2SC4637] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0
8.3. Size:101K sanyo
2sc4635.pdf 
Ordering number EN3704A NPN Triple Diffused Planar Silicon Transistor 2SC4635 1500V/20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit mm Small Cob (typical Cob=1.9pF). 2079B Full-isolation package. [2SC4635] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0
8.4. Size:30K sanyo
2sc4636ls.pdf 
Ordering number ENN3705B 2SC4636LS NPN Triple Diffused Planar Silicon Transistor 2SC4636LS 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit mm Small Cob(typical Cob=1.4pF). 2079D Full-isolation package. [2SC4636LS] High reliability(Adoption of HVP process). 10.0 4.
8.5. Size:28K sanyo
2sc4635ls.pdf 
Ordering number ENN3704B 2SC4635LS NPN Triple Diffused Planar Silicon Transistor 2SC4635LS 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit mm Small Cob(typical Cob=1.9pF). 2079D Full-isolation package. [2SC4635LS] High reliability(Adoption of HVP process). 10.0 4.
8.6. Size:97K sanyo
2sc4631.pdf 
Ordering number EN3700A NPN Triple Diffused Planar Silicon Transistor 2SC4631 900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Cob (typical Cob=5.0pF). 2079B Full-isolation package. [2SC4631] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.
8.7. Size:28K sanyo
2sc4631ls.pdf 
Ordering number ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit mm Small Cob(typical Cob=5.0pF). 2079D Full-isolation package. [2SC4631LS] High reliability(Adoption of HVP process). 10.0 4.5
8.8. Size:28K sanyo
2sc4634ls.pdf 
Ordering number ENN3703B 2SC4634LS NPN Triple Diffused Planar Silicon Transistor 2SC4634LS 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit mm Small Cob(typical Cob=1.5pF). 2079D Full-isolation package. [2SC4634LS] High reliability(Adoption of HVP process). 10.0 4.
8.9. Size:26K sanyo
2sc4632ls.pdf 
Ordering number ENN3701B 2SC4632LS NPN Triple Diffused Planar Silicon Transistor 2SC4632LS 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit mm Small Cob(typical Cob=1.6pF). 2079D Full-isolation package. [2SC4632LS] High reliability(Adoption of HVP process). 10.0 4.
8.10. Size:98K sanyo
2sc4634.pdf 
Ordering number EN3703A NPN Triple Diffused Planar Silicon Transistor 2SC4634 1500V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit mm Small Cob (typical Cob=1.5pF). 2079B Full-isolation package. [2SC4634] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0
8.11. Size:89K sanyo
2sc4633.pdf 
Ordering number EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit mm Small Cob (typical Cob=2.0pF). 2079B Full-isolation package. [2SC4633] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0
8.12. Size:30K sanyo
2sc4637ls.pdf 
Ordering number ENN3706B 2SC4637LS NPN Triple Diffused Planar Silicon Transistor 2SC4637LS 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit mm Small Cob(typical Cob=1.8pF). 2079D Full-isolation package. [2SC4637LS] High reliability(Adoption of HVP process). 10.0 4.
8.13. Size:26K sanyo
2sc4633ls.pdf 
Ordering number ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit mm Small Cob(typical Cob=2.0pF). 2079D Full-isolation package. [2SC4633LS] High reliability(Adoption of HVP process). 10.0 4.
8.14. Size:89K sanyo
2sc4632.pdf 
Ordering number EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit mm Small Cob (typical Cob=1.6pF). 2079B Full-isolation package. [2SC4632] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0
8.15. Size:62K panasonic
2sc4638.pdf 
Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi
Другие транзисторы: 2SC4592, 2SC4593, 2SC4596E, 2SC4603R, 2SC4606, 2SC4613, 2SC4624, 2SC4628, 2SC1815, 2SC4638, 2SC4643, 2SC4647, 2SC4660, 2SC4671, 2SC4673, 2SC4675, 2SC4680
