2SC4630LS Datasheet and Replacement

Ordering number ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit mm Small Cob(typical Cob=2.8pF). 2079D Full isolation package. [2SC4630LS] High reliability(Adoption of HVP process). 10.0 4.5... See More ⇒

Ordering number EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Cob (typical Cob=2.8pF). 2079B Full isolation package. [2SC4630] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.... See More ⇒

Ordering number EN3705A NPN Triple Diffused Planar Silicon Transistor 2SC4636 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit mm Small Cob (typical Cob=1.4pF). 2079B Full-isolation package. [2SC4636] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0... See More ⇒

Ordering number EN3706A NPN Triple Diffused Planar Silicon Transistor 2SC4637 1800V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1800V). unit mm Small Cob (typical Cob=1.8pF). 2079B Full-isolation package. [2SC4637] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0... See More ⇒

Ordering number EN3704A NPN Triple Diffused Planar Silicon Transistor 2SC4635 1500V/20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit mm Small Cob (typical Cob=1.9pF). 2079B Full-isolation package. [2SC4635] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0... See More ⇒

Ordering number ENN3705B 2SC4636LS NPN Triple Diffused Planar Silicon Transistor 2SC4636LS 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit mm Small Cob(typical Cob=1.4pF). 2079D Full-isolation package. [2SC4636LS] High reliability(Adoption of HVP process). 10.0 4.... See More ⇒

Ordering number ENN3704B 2SC4635LS NPN Triple Diffused Planar Silicon Transistor 2SC4635LS 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit mm Small Cob(typical Cob=1.9pF). 2079D Full-isolation package. [2SC4635LS] High reliability(Adoption of HVP process). 10.0 4.... See More ⇒

Ordering number EN3700A NPN Triple Diffused Planar Silicon Transistor 2SC4631 900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Cob (typical Cob=5.0pF). 2079B Full-isolation package. [2SC4631] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.... See More ⇒

Ordering number ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit mm Small Cob(typical Cob=5.0pF). 2079D Full-isolation package. [2SC4631LS] High reliability(Adoption of HVP process). 10.0 4.5... See More ⇒

Ordering number ENN3703B 2SC4634LS NPN Triple Diffused Planar Silicon Transistor 2SC4634LS 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1500V). unit mm Small Cob(typical Cob=1.5pF). 2079D Full-isolation package. [2SC4634LS] High reliability(Adoption of HVP process). 10.0 4.... See More ⇒

Ordering number ENN3701B 2SC4632LS NPN Triple Diffused Planar Silicon Transistor 2SC4632LS 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit mm Small Cob(typical Cob=1.6pF). 2079D Full-isolation package. [2SC4632LS] High reliability(Adoption of HVP process). 10.0 4.... See More ⇒

Ordering number EN3703A NPN Triple Diffused Planar Silicon Transistor 2SC4634 1500V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1500V). unit mm Small Cob (typical Cob=1.5pF). 2079B Full-isolation package. [2SC4634] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0... See More ⇒

Ordering number EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit mm Small Cob (typical Cob=2.0pF). 2079B Full-isolation package. [2SC4633] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0... See More ⇒

Ordering number ENN3706B 2SC4637LS NPN Triple Diffused Planar Silicon Transistor 2SC4637LS 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1800V). unit mm Small Cob(typical Cob=1.8pF). 2079D Full-isolation package. [2SC4637LS] High reliability(Adoption of HVP process). 10.0 4.... See More ⇒

Ordering number ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=1200V). unit mm Small Cob(typical Cob=2.0pF). 2079D Full-isolation package. [2SC4633LS] High reliability(Adoption of HVP process). 10.0 4.... See More ⇒

Ordering number EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=1200V). unit mm Small Cob (typical Cob=1.6pF). 2079B Full-isolation package. [2SC4632] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0... See More ⇒

Power Transistors 2SC4638 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi... See More ⇒