Биполярный транзистор 2SC4808
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4808
Маркировка: 3M
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.125
W
Макcимально допустимое напряжение коллектор-база (Ucb): 15
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2
V
Макcимальный постоянный ток коллектора (Ic): 0.08
A
Предельная температура PN-перехода (Tj): 125
°C
Граничная частота коэффициента передачи тока (ft): 5000
MHz
Ёмкость коллекторного перехода (Cc): 0.7
pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора:
SC-75
Аналоги (замена) для 2SC4808
2SC4808
Datasheet (PDF)
..1. Size:41K panasonic
2sc4808 e.pdf Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat
..2. Size:37K panasonic
2sc4808.pdf Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat
8.1. Size:40K panasonic
2sc4809 e.pdf Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi
8.2. Size:40K panasonic
2sc4805 e.pdf Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.
8.3. Size:36K panasonic
2sc4805.pdf Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.
8.4. Size:36K panasonic
2sc4809.pdf Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi
8.5. Size:46K hitachi
2sc4807.pdf 2SC4807Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 4.4 GHz Typ High output power1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4807Absolute Maximum Ratings (Ta = 25C)Item Symbol Rati
8.6. Size:143K jmnic
2sc4804.pdf JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta
8.7. Size:951K kexin
2sc4807.pdf SMD Type TransistorsNPN Transistors2SC4807SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE
8.8. Size:185K inchange semiconductor
2sc4807.pdf INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4807DESCRIPTIONHigh Gain-Bandwidth Productf = 4.4 GHz TYP.THigh Output Power1 dB Power compression point P = 24 dBm TYP.cp@ V = 5V , I = 100 mA , f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF ~ UHF wide
8.9. Size:191K inchange semiconductor
2sc4806.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4806DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su
8.10. Size:114K inchange semiconductor
2sc4804.pdf Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute m
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