2SC4808 Datasheet. Specs and Replacement
Type Designator: 2SC4808 📄📄
SMD Transistor Code: 3M
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SC-75
- BJT ⓘ Cross-Reference Search
2SC4808 datasheet
..1. Size:41K panasonic
2sc4808 e.pdf 
Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat... See More ⇒
..2. Size:37K panasonic
2sc4808.pdf
Transistor 2SC4808 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. 3 High transition frequency fT. SSMini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rat... See More ⇒
8.1. Size:40K panasonic
2sc4809 e.pdf
Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi... See More ⇒
8.2. Size:40K panasonic
2sc4805 e.pdf
Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.... See More ⇒
8.3. Size:36K panasonic
2sc4805.pdf
Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.... See More ⇒
8.4. Size:36K panasonic
2sc4809.pdf
Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packi... See More ⇒
8.5. Size:46K hitachi
2sc4807.pdf
2SC4807 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 4.4 GHz Typ High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4807 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rati... See More ⇒
8.6. Size:143K jmnic
2sc4804.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta... See More ⇒
8.7. Size:951K kexin
2sc4807.pdf
SMD Type Transistors NPN Transistors 2SC4807 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE... See More ⇒
8.8. Size:185K inchange semiconductor
2sc4807.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4807 DESCRIPTION High Gain-Bandwidth Product f = 4.4 GHz TYP. T High Output Power 1 dB Power compression point P = 24 dBm TYP. cp @ V = 5V , I = 100 mA , f = 900 MHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF wide... See More ⇒
8.9. Size:191K inchange semiconductor
2sc4806.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4806 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power su... See More ⇒
8.10. Size:114K inchange semiconductor
2sc4804.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute m... See More ⇒
Detailed specifications: 2SC4755, 2SC4782, 2SC4783, 2SC4784, 2SC4787, 2SC4791, 2SC4805, 2SC4807, 2N4401, 2SC4809, 2SC4810, 2SC4811, 2SC4813, 2SC4814, 2SC4815, 2SC4821, 2SC4829
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