Биполярный транзистор 2SC4852 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4852
Маркировка: YT
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 240 MHz
Ёмкость коллекторного перехода (Cc): 1.4 pf
Статический коэффициент передачи тока (hfe): 800
Корпус транзистора: CP
2SC4852 Datasheet (PDF)
2sc4852.pdf
Ordering number:EN4559NPN Epitaxial Planar Silicon Transistor2SC4852Muting CircuitsFeatures Package Dimensions Small-sized package permitting 2SC4852-appliedunit:mmsets to be made smaller and slimer.2018B Small output capacitance.[2SC4852] Low collector-to-emitter saturation voltage. Small ON resistance. 0.40.1630~0.11 0.95 20.951.92.91 : Base
2sc4852.pdf
SMD Type TransistorsNPN Transistors2SC4852SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle
2sc4853a.pdf
Ordering number : ENA1076 2SC4853ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorLow-Voltage, Low-Current2SC4853AHigh-Frequency Amplifier ApplicationsFeatures Low-voltage, low-current operation : fT=5GHz typ.(VCE=1V, IC=1mA) :S21e2=7dB typ (f=1GHz).: NF=2.6dB typ (f=1GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol
2sc4854.pdf
Ordering number:EN4579NPN Epitaxial Planar Silicon Transistor2SC4854Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2018B: NF=2.6dB typ (f=1GHz).[2SC4854]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitte
2sc4851.pdf
Ordering number:EN4558NPN Epitaxial Planar Silicon Transistor2SC4851Muting CircuitsFeatures Package Dimensions Very small-sized package permitting 2SC4851-unit:mmapplied sets to be made smaller and slimer.2059B Small output capacitance.[2SC4851] Low collector-to-emitter saturation voltage.0.3 Small ON resistance.0.1530~0.11 20.3 0.60.65 0.650.
2sc4855.pdf
Ordering number:EN4759NPN Epitaxial Planar Silicon Transistor2SC4855Low-Voltage, Low-Current&High-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7.5dB typ2110A(f=1GHz).[2SC4855]1.9: NF=2.6dB typ (f=1GHz).0.95 0.950.40.164 30 to 0.1210.60.95 0.85
2sc4853.pdf
Ordering number:EN4578ANPN Epitaxial Planar Silicon Transistor2SC4853Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2059B: NF=2.6dB typ (f=1GHz).[2SC4853]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base
2sc4853a-4.pdf
Ordering number : ENA1076A2SC4853ARF Transistorhttp://onsemi.com6V, 15mA, fT=5GHz, NPN Single MCPFeatures Low-voltage, low-current operation : fT=5GHz typ (VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz) 2 : NF=2.6dB typ (f=1GHz)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 12 VCollector-to-
2sc4854.pdf
SMD Type TransistorsNPN Transistors2SC4854SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=6V1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector
2sc4850.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4850DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050