2SC4852 Datasheet. Specs and Replacement
Type Designator: 2SC4852 📄📄
SMD Transistor Code: YT
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 240 MHz
Collector Capacitance (Cc): 1.4 pF
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: CP
- BJT ⓘ Cross-Reference Search
2SC4852 datasheet
..1. Size:100K sanyo
2sc4852.pdf 
Ordering number EN4559 NPN Epitaxial Planar Silicon Transistor 2SC4852 Muting Circuits Features Package Dimensions Small-sized package permitting 2SC4852-applied unit mm sets to be made smaller and slimer. 2018B Small output capacitance. [2SC4852] Low collector-to-emitter saturation voltage. Small ON resistance. 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base... See More ⇒
..2. Size:818K kexin
2sc4852.pdf
SMD Type Transistors NPN Transistors 2SC4852 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle... See More ⇒
8.2. Size:55K sanyo
2sc4853a.pdf
Ordering number ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current 2SC4853A High-Frequency Amplifier Applications Features Low-voltage, low-current operation fT=5GHz typ. (VCE=1V, IC=1mA) S21e 2=7dB typ (f=1GHz). NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol ... See More ⇒
8.3. Size:125K sanyo
2sc4854.pdf
Ordering number EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2018B NF=2.6dB typ (f=1GHz). [2SC4854] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitte... See More ⇒
8.4. Size:104K sanyo
2sc4851.pdf
Ordering number EN4558 NPN Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits Features Package Dimensions Very small-sized package permitting 2SC4851- unit mm applied sets to be made smaller and slimer. 2059B Small output capacitance. [2SC4851] Low collector-to-emitter saturation voltage. 0.3 Small ON resistance. 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.... See More ⇒
8.5. Size:122K sanyo
2sc4855.pdf
Ordering number EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7.5dB typ 2110A (f=1GHz). [2SC4855] 1.9 NF=2.6dB typ (f=1GHz). 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 ... See More ⇒
8.6. Size:126K sanyo
2sc4853.pdf
Ordering number EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions Low-voltage, low-current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2059B NF=2.6dB typ (f=1GHz). [2SC4853] 0.3 0.15 3 0 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base ... See More ⇒
8.7. Size:241K onsemi
2sc4853a-4.pdf
Ordering number ENA1076A 2SC4853A RF Transistor http //onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features Low-voltage, low-current operation fT=5GHz typ (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz) 2 NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-... See More ⇒
8.9. Size:1279K kexin
2sc4854.pdf
SMD Type Transistors NPN Transistors 2SC4854 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=6V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collector... See More ⇒
8.10. Size:186K inchange semiconductor
2sc4850.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4850 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A... See More ⇒
Detailed specifications: 2SC4838, 2SC4839, 2SC4840, 2SC4841, 2SC4842, 2SC4843, 2SC4844, 2SC4851, 431, 2SC4853, 2SC4854, 2SC4855, 2SC4860, 2SC4861, 2SC4863, 2SC4864, 2SC4865
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