2SC4890 datasheet и подбор замены

 ..1. Size:107K  sanyo
 2sc4890.pdf 

Ordering number EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4890] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0

 8.1. Size:743K  1
 2sc482 2sc483 2sc484 2sc485 2sc486 2sc487 2sc488 2sc489.pdf 

 8.2. Size:107K  sanyo
 2sc4891.pdf 

Ordering number EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC4891] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0

 8.3. Size:84K  renesas
 2sc4899.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.4. Size:74K  panasonic
 2sc4892.pdf 

Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High-speed switching 90 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0 Allowing supply with the radial taping 2.25 0.2 0.65 0.1 0.35 0.1 1.05 0.1 Absolute Maximum Ratings (TC

 8.5. Size:40K  panasonic
 2sc4898.pdf 

Power Transistors 2SC4898 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (TC=25 C) 1.6 0.2 Parameter Symbol Ratings U

 8.6. Size:21K  hitachi
 2sc4897.pdf 

 8.7. Size:212K  inchange semiconductor
 2sc4891.pdf 

isc Silicon NPN Power Transistor 2SC4891 DESCRIPTION High Switching Speed High reliability High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base