2SC4890 Datasheet and Replacement
Type Designator: 2SC4890
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO-3PML
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2SC4890 Datasheet (PDF)
2sc4890.pdf

Ordering number:EN4137NPN Triple Diffused Planar Silicon Transistor2SC4890Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC4890] Adoption of MBIT process.16.05.63.43.12.82.0
2sc4891.pdf

Ordering number:EN4138NPN Triple Diffused Planar Silicon Transistor2SC4891Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC4891] Adoption of MBIT process.16.05.63.43.12.82.0
2sc4899.pdf

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA327 | 2N3148 | BSP52T3 | BC857C | 3DD5G | 2N3565 | DTL1642
Keywords - 2SC4890 transistor datasheet
2SC4890 cross reference
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History: 2SA327 | 2N3148 | BSP52T3 | BC857C | 3DD5G | 2N3565 | DTL1642



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