2SC4900 - Даташиты. Аналоги. Основные параметры

2SC4900 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4900 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VC

Ordering number EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=47k , R2=47k ). 2059B Very small-sized package permitting 2SC4909- [2SC4909] applied sets to be made smaller and slimmer. 0.3 0.15 Small ON resistance. 3 0 to 0.1 1 2 0.3 0.6

2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4901 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collect

2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) 2SC4908 Symbol Unit Symbol Conditions 2SC4908 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 V ICBO VCB=800V 100max A VCEO 800 VEB=

2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCBO 600 V VCB=600V 1max mA IEB

2SC4901 NPN 2SC4901 NPN SOT-323 VHF UHF CATV S21e 2 13.5d

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION With TO-220F package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMB

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4907 DESCRIPTION Collector Emitter Breakdown Voltage V = 500V(Min.) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN RF Transistor 2SC4901 DESCRIPTION High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V IC=20mA f=0.9GHz High gain, low noise figure S 2 = 13.5 dB @ VCE=5V IC=20mA f=0.9GHz, 21e NF = 1.6dB( Typ ) @ VCE=5V IC=5mA f=0.9GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS UHF / VHF wide band ampl

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4901YK DESCRIPTION High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V IC=20mA f=0.9GHz High gain, low noise figure S 2 = 13.5 dB @ VCE=5V IC=20mA f=0.9GHz, 21e NF = 1.6dB( Typ ) @ VCE=5V IC=5mA f=0.9GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS