2SC4900 Datasheet. Equivalente

 ..1. Size:47K  hitachi
 2sc4900.pdf

2SC4900 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4900 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VC

 8.1. Size:743K  1
 2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf

 8.2. Size:61K  sanyo
 2sc4909.pdf

Ordering number EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Features Package Dimensions High DC current gain. unit mm On-chip bias resistance (R1=47k , R2=47k ). 2059B Very small-sized package permitting 2SC4909- [2SC4909] applied sets to be made smaller and slimmer. 0.3 0.15 Small ON resistance. 3 0 to 0.1 1 2 0.3 0.6

 8.3. Size:46K  hitachi
 2sc4901.pdf

2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4901 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collect

 8.4. Size:24K  sanken-ele
 2sc4908.pdf

2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) 2SC4908 Symbol Unit Symbol Conditions 2SC4908 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 V ICBO VCB=800V 100max A VCEO 800 VEB=

 8.5. Size:25K  sanken-ele
 2sc4907.pdf

2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCBO 600 V VCB=600V 1max mA IEB

 8.6. Size:1831K  slkor
 2sc4901-b 2sc4901-c 2sc4901-d.pdf

2SC4901 NPN 2SC4901 NPN SOT-323 VHF UHF CATV S21e 2 13.5d

 8.7. Size:109K  inchange semiconductor
 2sc4908.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION With TO-220F package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMB

 8.8. Size:182K  inchange semiconductor
 2sc4907.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4907 DESCRIPTION Collector Emitter Breakdown Voltage V = 500V(Min.) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =2

 8.9. Size:228K  inchange semiconductor
 2sc4901.pdf

isc Silicon NPN RF Transistor 2SC4901 DESCRIPTION High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V IC=20mA f=0.9GHz High gain, low noise figure S 2 = 13.5 dB @ VCE=5V IC=20mA f=0.9GHz, 21e NF = 1.6dB( Typ ) @ VCE=5V IC=5mA f=0.9GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS UHF / VHF wide band ampl

 8.10. Size:198K  inchange semiconductor
 2sc4901yk.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4901YK DESCRIPTION High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V IC=20mA f=0.9GHz High gain, low noise figure S 2 = 13.5 dB @ VCE=5V IC=20mA f=0.9GHz, 21e NF = 1.6dB( Typ ) @ VCE=5V IC=5mA f=0.9GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS