Ordering number:EN4410NPN Epitaxial Planar Silicon Transistor2SC4909Muting Circuits, DriversFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=47k , R2=47k ).2059B Very small-sized package permitting 2SC4909-[2SC4909]applied sets to be made smaller and slimmer.0.30.15 Small ON resistance.30 to 0.11 20.3 0.6

2SC4901Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz Typ High gain, low noise figurePG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC4901Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect

2SC4900Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz Typ High gain, low noise figurePG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4900Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VC

2SC4908Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)2SC4908Symbol Unit Symbol Conditions 2SC4908 Unit0.24.20.210.1c0.52.8VCBO 900V ICBO VCB=800V 100max AVCEO 800 VEB=

2SC4907Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit0.24.20.210.1c0.52.8ICBOVCBO 600 V VCB=600V 1max mAIEB

2SC4901NPN2SC4901 NPN SOT-323 VHFUHFCATV :S21e2 13.5d

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION With TO-220F package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4907DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 500V(Min.)(BR)CEOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN RF Transistor 2SC4901DESCRIPTION High gain bandwidth productfT = 9 GHz (Typ) @ VCE=5VIC=20mAf=0.9GHz High gain, low noise figureS 2 = 13.5 dB @ VCE=5VIC=20mAf=0.9GHz,21eNF = 1.6dB( Typ ) @ VCE=5VIC=5mA f=0.9GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUHF / VHF wide band ampl

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4901YKDESCRIPTIONHigh gain bandwidth productfT = 9 GHz (Typ) @ VCE=5VIC=20mAf=0.9GHzHigh gain, low noise figureS 2 = 13.5 dB @ VCE=5VIC=20mAf=0.9GHz,21eNF = 1.6dB( Typ ) @ VCE=5VIC=5mA f=0.9GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS