Ordering number:EN4768NPN Epitaxial Planar Silicon Transistor2SC4922Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=47k , R2=47k ).2106A Very small-sized package permitting 2SC4922-[2SC4922]0.75applied sets to be made smaller and slimmer.0.30.6 Small ON resistance.0 to 0.1

Ordering number:EN4766NPN Epitaxial Planar Silicon Transistor2SC4920Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=4.7k , R2=4.7k ).2106A Very small-sized package permitting 2SC4920-[2SC4920]applied sets to be made smaller and slimmer.0.750.30.6 Small ON resistance.0 to 0.1

Ordering number:EN4767NPN Epitaxial Planar Silicon Transistor2SC4921Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=10k , R2=10k ).2106A Very small-sized package permitting 2SC4921-[2SC4921]0.75applied sets to be made smaller and slimmer.0.30.6 Small ON resistance.0 to 0.1

2SC4926Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4926Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage V

2SC4927Silicon NPN Triple DiffusedApplicationTV/character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V Built-in damper diode type Isolated packageTO-3PFMOutlineTO-3PFM211. Base ID2. Collector 3. Emitter13232SC4927Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltag

2SC4928Silicon NPN Triple DiffusedApplicationTO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 15 A Suitable for large size CRT Display11. Base22. Collector33. EmitterAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4927DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)CESBuilt-in damper diode typeIsolated package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV/character display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4928DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflection outputapplications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltag

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION With TO-3PML package High speed High reliability High breakdown voltage APPLICATIONS High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute