Биполярный транзистор 2SC4957 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4957
Маркировка: T83
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.18 W
Макcимально допустимое напряжение коллектор-база (Ucb): 9 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 12000 MHz
Ёмкость коллекторного перехода (Cc): 0.3 pf
Статический коэффициент передачи тока (hfe): 75
Корпус транзистора: MINI-MOLD-4PINS
2SC4957 Datasheet (PDF)
2sc4957.pdf
DATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.3 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4957-T1 3 Kpcs/
2sc4954.pdf
DATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback Capacitance2.80.2 +0.1 Cre = 0.3 pF TYP.1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4954-T1 3 Kpc
2sc4959.pdf
DATA SHEETSILICON TRANSISTOR2SC4959HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.4 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2
2sc4956.pdf
DATA SHEETSILICON TRANSISTOR2SC4956HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.20 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4956-T1 3 Kpcs
2sc4955.pdf
DATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance2.80.2 Cre = 0.4 pF TYP.+0.1 1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4955-T1 3 Kpcs/Re
2sc4958.pdf
DATA SHEETSILICON TRANSISTOR2SC4958HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.3 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2
2sc4953.pdf
Power Transistors2SC4953Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEDielectric breakdown voltage of the package: > 5kV1.4
2sc4954.pdf
SMD Type TransistorsNPN Transistors2SC4954SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector
2sc4955.pdf
SMD Type TransistorsNPN Transistors2SC4955SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector
2sc4953.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4953DESCRIPTIONSilicon NPN triple diffusion planar typeHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high breakdown voltage highspeed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050