2SC5045 datasheet, аналоги, основные параметры
Наименование производителя: 2SC5045 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 4
Корпус транзистора: TO-3PML
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Аналоги (замена) для 2SC5045
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2SC5045 даташит
..1. Size:108K sanyo
2sc5045.pdf 
Ordering number EN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5045] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0
8.3. Size:112K sanyo
2sc5046.pdf 
Ordering number EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5046] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
8.4. Size:101K sanyo
2sc5042.pdf 
Ordering number EN4780 NPN Triple Diffused Planar Silicon Transistor 2SC5042 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5042] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.
8.5. Size:101K sanyo
2sc5041.pdf 
Ordering number EN4779 NPN Triple Diffused Planar Silicon Transistor 2SC5041 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5041] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode.
8.6. Size:105K sanyo
2sc5044.pdf 
Ordering number EN4782A NPN Triple Diffused Planar Silicon Transistor 2SC5044 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5044] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0
8.7. Size:106K sanyo
2sc5043.pdf 
Ordering number EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5043] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode.
8.8. Size:108K sanyo
2sc5047.pdf 
Ordering number EN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5047] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
8.9. Size:24K hitachi
2sc5049.pdf 
2SC5049 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5049 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collect
8.10. Size:41K jmnic
2sc5042.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5042 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absol
8.11. Size:42K jmnic
2sc5048.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Collector metal (fin) is fully covered with mold resin APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION 1 Base
8.12. Size:342K kexin
2sc5049.pdf 
SMD Type Transistors NPN Transistors 2SC5049 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect
8.13. Size:189K inchange semiconductor
2sc5042.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5042 DESCRIPTION NPN triple diffused planar silicon transistor High Breakdown Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIM
8.14. Size:189K inchange semiconductor
2sc5043.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5043 DESCRIPTION NPN triple diffused planar silicon transistor High Breakdown Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIM
8.15. Size:153K inchange semiconductor
2sc5048.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS
8.16. Size:213K inchange semiconductor
2sc5047.pdf 
isc Silicon NPN Power Transistor 2SC5047 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1600V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1600 V CBO
Другие транзисторы: 2SC5018, 2SC5019, 2SC5032, 2SC5037, 2SC5037A, 2SC5041, 2SC5043, 2SC5044, 8550, 2SC5046, 2SC5049, 2SC5050, 2SC5051, 2SC5052, 2SC5060, 2SC5063, 2SC5069
