2SC5060 - описание и поиск аналогов

2SC5060 Transistors Power transistor (90 10V, 3A) 2SC5060 External dimensions (Units mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 2.5 6.8 3) Strong protection against reverse power surges due to L loads. 4) Darlington connection for high DC current gain. 0.65Max. 5) Built-in resistor between base and emitter

2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

Ordering number EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2038A High DC current gain. [2SC5069] Low collector-to-emitter saturation voltage. 4.5 High VEBO. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Ba

Power Transistors 2SC5063 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 N type package enabling direct soldering of the radiating fin to 5.08 0

SMD Type Transistors NPN Transistors 2SC5064 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type Transistors NPN Transistors 2SC5069 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO