2SC5093 - аналоги, параметры транзистора - Справочник транзисторов

2SC5093 - Аналоги. Основные параметры

   Наименование производителя: 2SC5093
   Маркировка: MDR_MDO
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 1.5 V
   Макcимальный постоянный ток коллектора (Ic): 0.04 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 7000 MHz
   Ёмкость коллекторного перехода (Cc): 0.65 pf
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: 2-2K1A

Аналоги (замена) для 2SC5093

- подбор ⓘ биполярного транзистора по параметрам

2SC5093 - технические параметры

..1. Size:300K toshiba
2sc5093.pdf pdf_icon

2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.1. Size:126K 1
2sc509.pdf pdf_icon

http //www.Datasheet4U.com http //www.Datasheet4U.com http //www.Datasheet4U.com http //www.Datasheet4U.com

8.2. Size:743K 1
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf pdf_icon

8.3. Size:120K 1
2sc509gtm.pdf pdf_icon

8.4. Size:473K toshiba
2sc5097.pdf pdf_icon

2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.5. Size:469K toshiba
2sc5091.pdf pdf_icon

2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.6. Size:125K toshiba
2sc5096ft.pdf pdf_icon

2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.

8.7. Size:296K toshiba
2sc5094.pdf pdf_icon

2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.8. Size:466K toshiba
2sc5090.pdf pdf_icon

2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.9. Size:296K toshiba
2sc5096.pdf pdf_icon

2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.10. Size:298K toshiba
2sc5098.pdf pdf_icon

2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.11. Size:125K toshiba
2sc5091ft.pdf pdf_icon

2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.5

8.12. Size:475K toshiba
2sc5092.pdf pdf_icon

2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.13. Size:295K toshiba
2sc5095.pdf pdf_icon

2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.8dB, S 2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

8.14. Size:188K jmnic
2sc5099.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC5099 DESCRIPTION With TO-3PML package Complement to type 2SA1907 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag

8.15. Size:24K sanken-ele
2sc5099.pdf pdf_icon

2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC5099 Unit Symbol Conditions 2SC5099 Unit 0.2 0.2 5.5 15.6 0.2 VCBO 120 V ICBO VCB=120V 10max A 3.45 VCEO 80 V IEBO VEB=6V 10max A VE

8.16. Size:1529K kexin
2sc5094.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SC5094 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

8.17. Size:185K inchange semiconductor
2sc5090.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5090 DESCRIPTION High Gain Bandwidth Product f = 10 GHz TYP. T High Gain, Low Noise Figure S 2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz 21e 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF UHF band low noise amplifier applica

8.18. Size:195K inchange semiconductor
2sc5099.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5099 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1907 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM

Другие транзисторы... 2SC5077A , 2SC5078 , 2SC5079 , 2SC5080 , 2SC5081 , 2SC5089 , 2SC5090 , 2SC5091 , BC549 , 2SC5094 , 2SC5097 , 2SC5098 , 2SC5104 , 2SC5109 , 2SC5110 , 2SC5111 , 2SC5121 .